On the recombination centers of iron-gallium pairs in Ga-doped silicon

Tine Uberg Nærland, Simone Bernardini, Halvard Haug, Sigbjørn Grini, Lasse Vines, Nathan Stoddard, Mariana Bertoni

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Gallium (Ga) doped silicon (Si) is becoming a relevant player in solar cell manufacturing thanks to its demonstrated low light-induced degradation, yet little is known about Ga-related recombination centers. In this paper, we study iron (Fe)-related recombination centers in as-grown, high quality, directionally solidified, monocrystalline Ga-doped Si. While no defect states could be detected by deep level transient spectroscopy, lifetime spectroscopy analysis shows that the minority carrier lifetime in as-grown wafers is dominated by low levels of FeGa related defect complexes. FeGa pairs have earlier been shown to occur in two different structural configurations. Herein, we show that in terms of recombination strength, the orthorhombic pair-configuration is dominant over the trigonal pair-configuration for FeGa. Furthermore, the defect energy level in the band gap for the orthorhombic defect center is determined to be EV + 0.09 eV, and the capture cross-section ratio of the same defect center is determined to be 220.

Original languageEnglish (US)
Article number085703
JournalJournal of Applied Physics
Volume122
Issue number8
DOIs
StatePublished - Aug 28 2017

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Nærland, T. U., Bernardini, S., Haug, H., Grini, S., Vines, L., Stoddard, N., & Bertoni, M. (2017). On the recombination centers of iron-gallium pairs in Ga-doped silicon. Journal of Applied Physics, 122(8), [085703]. https://doi.org/10.1063/1.5000358