On the dose-rate threshold of beam damage in TEM

Nan Jiang, John Spence

Research output: Contribution to journalArticlepeer-review

55 Scopus citations

Abstract

Electron beam damage in a CaF 2-Al 2O 3-SiO 2 glass is investigated using time-dependent Ca L 23 and O K-edge electron energy-loss spectroscopy. It appears that there is a threshold dose rate, below which the damage involving the formation of O defects may not be detected, at any total dose. This suggests that the threshold phenomenon of dose rate may result from the competition of damage and recovery processes. The accumulation of damage can only occur when the damage rate is higher than the recovery rate. For surface sputtering process in TEM, the recovery rate is negligible. Therefore, there is no threshold dose rate for surface sputtering.

Original languageEnglish (US)
Pages (from-to)77-82
Number of pages6
JournalUltramicroscopy
Volume113
DOIs
StatePublished - Feb 1 2012

Keywords

  • (S)TEM
  • Beam damage
  • Dose rate threshold
  • EELS

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Instrumentation

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