On the development of CAD techniques suitable for the design of high-power RF transistors

Peter H. Aaen, Jaime A. Plá, Constantine Balanis

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

A full-wave modeling procedure was developed to simulate the package, bonding wires, and MOS capacitors used in the design of matching networks found within RF/microwave power transistors. The complex packaging environment was segmented into its constituent components and simulation techniques were developed for each component, as well as the inter-element coupling. An S-parameter test fixture and package was developed that permits measurements of these types of devices. The simulation and measurement procedures were used to model various circuits. Measured S-parameters and those obtained using the full-wave methodology were in good agreement. Simulation results using an inductance-only bonding-wire model were performed and differences between the S-parameters were observed. A detailed examination of the loss introduced by the matching network was performed and simulations and measurements matched closely.

Original languageEnglish (US)
Pages (from-to)3067-3074
Number of pages8
JournalIEEE Transactions on Microwave Theory and Techniques
Volume53
Issue number10
DOIs
Publication statusPublished - Oct 2005

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Keywords

  • Bonding wires
  • Computer-aided design (CAD) techniques
  • High-power RF transistors
  • MOS capacitors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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