On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS Technology

Adilson S. Cardoso, Anup P. Omprakash, Partha Sarathi Chakraborty, Nedeljko Karaulac, David M. Fleischhauer, Adrian Ildefonso, Saeed Zeinolabedinzadeh, Michael A. Oakley, Tikurete G. Bantu, Nelson E. Lourenco, John D. Cressler

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Engineering & Materials Science

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