TY - GEN
T1 - ON state stability of Programmable Metalization Cell (PMC) memory
AU - Kamalanathan, Deepak
AU - Baliga, Sunil
AU - Puthen Thermadam, Sarath C.
AU - Kozicki, Michael
PY - 2007
Y1 - 2007
N2 - Programmable Metallization Cell (PMC) memory is a non-volatile memory technology that is based on the electrochemical growth of a metallic electrodeposit between two metal electrodes, one oxidizable and another electrochemically indifferent. Considerable research has already been done on the processing and the operation of these devices for a variety of materials and their performance has been shown to be promising. However, since the metallic features in PMC devices are grown rather than deposited and patterned, their behavior is expected to be different from that of a typical metallic wire. This work focuses on the characterization of these devices with respect to the durability of the ON state when stressed under various constant bias conditions. In general, negative bias (against the direction necessary for electrodeposition) leads to a slow increase in resistance whereas a positive bias results in a decrease in resistance.
AB - Programmable Metallization Cell (PMC) memory is a non-volatile memory technology that is based on the electrochemical growth of a metallic electrodeposit between two metal electrodes, one oxidizable and another electrochemically indifferent. Considerable research has already been done on the processing and the operation of these devices for a variety of materials and their performance has been shown to be promising. However, since the metallic features in PMC devices are grown rather than deposited and patterned, their behavior is expected to be different from that of a typical metallic wire. This work focuses on the characterization of these devices with respect to the durability of the ON state when stressed under various constant bias conditions. In general, negative bias (against the direction necessary for electrodeposition) leads to a slow increase in resistance whereas a positive bias results in a decrease in resistance.
KW - Constant bias stress
KW - Electrodepostion
KW - Electromigration
KW - Non-volatile memory
KW - ON state retention
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M3 - Conference contribution
AN - SCOPUS:48549089846
SN - 1424413621
SN - 9781424413621
T3 - Proceedings - 2007 Non-Volatile Memory Technology Symposium, NVMTS 07
SP - 91
EP - 95
BT - Proc. - Non-Volatile Mem. Technol. Symp., NVMTS
T2 - 8th Annual Non-Volatile Memory Technology Symposium, NVMTS 07
Y2 - 10 November 2007 through 13 November 2007
ER -