On nonlinear modeling of microwave devices using interpolating wavelets

Mikhail Toupikov, George Pan, Barry K. Gilbert

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Nonlinear semiconductor devices are modeled using the sparse point representation based upon interpolating wavelets. The functions of potential, fields, electron, and hole current densities inside the device are represented by a twofold expansion in scaling functions and wavelets. In most regions where the functions are smoothly varying, only scaling functions are employed as the bases. In contrast, in small regions with sharp material or field variations, additional basis functions, i.e., wavelets, are introduced. A nonuniform mesh generated in this manner is fully adaptive, dynamic, and object oriented. Examples of device simulations are presented, demonstrating good agreement with published literature and commercial software. The numerical examples also show substantial savings in computer memory for electrically large problems.

Original languageEnglish (US)
Pages (from-to)500-509
Number of pages10
JournalIEEE Transactions on Microwave Theory and Techniques
Volume48
Issue number4 PART 1
DOIs
StatePublished - 2000

Fingerprint

Microwave devices
microwaves
memory (computers)
scaling
potential fields
Semiconductor devices
semiconductor devices
mesh
Current density
current density
computer programs
Data storage equipment
expansion
Electrons
electrons
simulation

Keywords

  • Interpolating wavelets
  • Microwave devices
  • Nonlinear modeling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

On nonlinear modeling of microwave devices using interpolating wavelets. / Toupikov, Mikhail; Pan, George; Gilbert, Barry K.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 48, No. 4 PART 1, 2000, p. 500-509.

Research output: Contribution to journalArticle

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