On increasing the accuracy of simulations of deposition and etching processes using radiosity and the level set method

Clemens Heitzinger, Siegfried Selberherr, Josef Fugger, Oliver Häberlen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

Abstract

Deposition and etching in Silicon trenches is an important step of today's semiconductor manufacturing. Understanding the surface evolution enables to predict the resulting profiles and thus to optimize process parameters. Simulations using the radiosity modeling approach and the level set method provide accurate results, but their speed has to be considered when employing advanced models and for purposes of inverse modeling. In this paper strategies for increasing the accuracy of deposition simulations while decreasing simulation times are presented. Two algorithms were devised: first, intertwining narrow banding and extending the speed function yields a fast and accurate level set algorithm. Second, an algorithm which coarsens the surface reduces the computational demands of the radiosity method. Finally measurements of a typical TEOS deposition process are compared with simulation results both with and without coarsening of the surface elements. It was found that the computational effort is significantly reduced without sacrificing the accuracy of the simulations.

Original languageEnglish (US)
Title of host publicationEuropean Solid-State Device Research Conference
EditorsElena Gnani, Giorgio Baccarani, Massimo Rudan
PublisherIEEE Computer Society
Pages347-350
Number of pages4
ISBN (Electronic)8890084782
DOIs
StatePublished - Jan 1 2002
Event32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy
Duration: Sep 24 2002Sep 26 2002

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other32nd European Solid-State Device Research Conference, ESSDERC 2002
CountryItaly
CityFirenze
Period9/24/029/26/02

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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    Heitzinger, C., Selberherr, S., Fugger, J., & Häberlen, O. (2002). On increasing the accuracy of simulations of deposition and etching processes using radiosity and the level set method. In E. Gnani, G. Baccarani, & M. Rudan (Eds.), European Solid-State Device Research Conference (pp. 347-350). (European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2002.194940