TY - GEN
T1 - On increasing the accuracy of simulations of deposition and etching processes using radiosity and the level set method
AU - Heitzinger, Clemens
AU - Selberherr, Siegfried
AU - Fugger, Josef
AU - Häberlen, Oliver
PY - 2002
Y1 - 2002
N2 - Deposition and etching in Silicon trenches is an important step of today's semiconductor manufacturing. Understanding the surface evolution enables to predict the resulting profiles and thus to optimize process parameters. Simulations using the radiosity modeling approach and the level set method provide accurate results, but their speed has to be considered when employing advanced models and for purposes of inverse modeling. In this paper strategies for increasing the accuracy of deposition simulations while decreasing simulation times are presented. Two algorithms were devised: first, intertwining narrow banding and extending the speed function yields a fast and accurate level set algorithm. Second, an algorithm which coarsens the surface reduces the computational demands of the radiosity method. Finally measurements of a typical TEOS deposition process are compared with simulation results both with and without coarsening of the surface elements. It was found that the computational effort is significantly reduced without sacrificing the accuracy of the simulations.
AB - Deposition and etching in Silicon trenches is an important step of today's semiconductor manufacturing. Understanding the surface evolution enables to predict the resulting profiles and thus to optimize process parameters. Simulations using the radiosity modeling approach and the level set method provide accurate results, but their speed has to be considered when employing advanced models and for purposes of inverse modeling. In this paper strategies for increasing the accuracy of deposition simulations while decreasing simulation times are presented. Two algorithms were devised: first, intertwining narrow banding and extending the speed function yields a fast and accurate level set algorithm. Second, an algorithm which coarsens the surface reduces the computational demands of the radiosity method. Finally measurements of a typical TEOS deposition process are compared with simulation results both with and without coarsening of the surface elements. It was found that the computational effort is significantly reduced without sacrificing the accuracy of the simulations.
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U2 - 10.1109/ESSDERC.2002.194940
DO - 10.1109/ESSDERC.2002.194940
M3 - Conference contribution
AN - SCOPUS:0042532945
T3 - European Solid-State Device Research Conference
SP - 347
EP - 350
BT - European Solid-State Device Research Conference
A2 - Gnani, Elena
A2 - Baccarani, Giorgio
A2 - Rudan, Massimo
PB - IEEE Computer Society
T2 - 32nd European Solid-State Device Research Conference, ESSDERC 2002
Y2 - 24 September 2002 through 26 September 2002
ER -