Off-axis electron holographic potential mapping across AlGaAs/AlAs/GaAs heterostructures

Suk Chung; Shane Johnson; Yong-Hang Zhang; David Smith; Martha McCartney

doi:10.1063/1.3062449

Off-axis electron holographic potential mapping across AlGaAs/AlAs/GaAs heterostructures

Suk Chung, Shane Johnson, Yong-Hang Zhang, David Smith, Martha McCartney

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The electrostatic potential profile across AlGaAs/AlAs/GaAs heterostructures containing 1-μm -thick n -doped (or p -doped) AlGaAs layers is measured using off-axis electron holography. Simulations of the potential profiles assuming no unintentional impurities in the undoped regions of the samples show small discrepancies with experiment. Revised simulations reproduce the measurements accurately, when a p -layer with an 8.4× 10¹¹ cm^-2 acceptor density is included at the buffer/substrate interface to simulate the presence of unintentional carbon impurities.

Original language	English (US)
Article number	014910
Journal	Journal of Applied Physics
Volume	105
Issue number	1
DOIs	https://doi.org/10.1063/1.3062449
State	Published - 2009

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.3062449

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@article{3c71b066974b456cbb9ee27fc251986e,

title = "Off-axis electron holographic potential mapping across AlGaAs/AlAs/GaAs heterostructures",

abstract = "The electrostatic potential profile across AlGaAs/AlAs/GaAs heterostructures containing 1-μm -thick n -doped (or p -doped) AlGaAs layers is measured using off-axis electron holography. Simulations of the potential profiles assuming no unintentional impurities in the undoped regions of the samples show small discrepancies with experiment. Revised simulations reproduce the measurements accurately, when a p -layer with an 8.4× 1011 cm-2 acceptor density is included at the buffer/substrate interface to simulate the presence of unintentional carbon impurities.",

author = "Suk Chung and Shane Johnson and Yong-Hang Zhang and David Smith and Martha McCartney",

note = "Funding Information: This work was partially supported by the Department of Energy (Grant No. DE-FG02-04ER46168). We acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.",

year = "2009",

doi = "10.1063/1.3062449",

language = "English (US)",

volume = "105",

journal = "Journal of Applied Physics",

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T1 - Off-axis electron holographic potential mapping across AlGaAs/AlAs/GaAs heterostructures

AU - Chung, Suk

AU - Johnson, Shane

AU - Zhang, Yong-Hang

AU - Smith, David

AU - McCartney, Martha

N1 - Funding Information: This work was partially supported by the Department of Energy (Grant No. DE-FG02-04ER46168). We acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

PY - 2009

Y1 - 2009

N2 - The electrostatic potential profile across AlGaAs/AlAs/GaAs heterostructures containing 1-μm -thick n -doped (or p -doped) AlGaAs layers is measured using off-axis electron holography. Simulations of the potential profiles assuming no unintentional impurities in the undoped regions of the samples show small discrepancies with experiment. Revised simulations reproduce the measurements accurately, when a p -layer with an 8.4× 1011 cm-2 acceptor density is included at the buffer/substrate interface to simulate the presence of unintentional carbon impurities.

AB - The electrostatic potential profile across AlGaAs/AlAs/GaAs heterostructures containing 1-μm -thick n -doped (or p -doped) AlGaAs layers is measured using off-axis electron holography. Simulations of the potential profiles assuming no unintentional impurities in the undoped regions of the samples show small discrepancies with experiment. Revised simulations reproduce the measurements accurately, when a p -layer with an 8.4× 1011 cm-2 acceptor density is included at the buffer/substrate interface to simulate the presence of unintentional carbon impurities.

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Off-axis electron holographic potential mapping across AlGaAs/AlAs/GaAs heterostructures

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