Abstract

The electrostatic potential profile across AlGaAs/AlAs/GaAs heterostructures containing 1-μm -thick n -doped (or p -doped) AlGaAs layers is measured using off-axis electron holography. Simulations of the potential profiles assuming no unintentional impurities in the undoped regions of the samples show small discrepancies with experiment. Revised simulations reproduce the measurements accurately, when a p -layer with an 8.4× 1011 cm-2 acceptor density is included at the buffer/substrate interface to simulate the presence of unintentional carbon impurities.

Original languageEnglish (US)
Article number014910
JournalJournal of Applied Physics
Volume105
Issue number1
DOIs
StatePublished - 2009

Fingerprint

aluminum gallium arsenides
impurities
profiles
holography
electrons
simulation
buffers
electrostatics
carbon

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

@article{3c71b066974b456cbb9ee27fc251986e,
title = "Off-axis electron holographic potential mapping across AlGaAs/AlAs/GaAs heterostructures",
abstract = "The electrostatic potential profile across AlGaAs/AlAs/GaAs heterostructures containing 1-μm -thick n -doped (or p -doped) AlGaAs layers is measured using off-axis electron holography. Simulations of the potential profiles assuming no unintentional impurities in the undoped regions of the samples show small discrepancies with experiment. Revised simulations reproduce the measurements accurately, when a p -layer with an 8.4× 1011 cm-2 acceptor density is included at the buffer/substrate interface to simulate the presence of unintentional carbon impurities.",
author = "Suk Chung and Shane Johnson and Yong-Hang Zhang and David Smith and Martha McCartney",
year = "2009",
doi = "10.1063/1.3062449",
language = "English (US)",
volume = "105",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "1",

}

TY - JOUR

T1 - Off-axis electron holographic potential mapping across AlGaAs/AlAs/GaAs heterostructures

AU - Chung, Suk

AU - Johnson, Shane

AU - Zhang, Yong-Hang

AU - Smith, David

AU - McCartney, Martha

PY - 2009

Y1 - 2009

N2 - The electrostatic potential profile across AlGaAs/AlAs/GaAs heterostructures containing 1-μm -thick n -doped (or p -doped) AlGaAs layers is measured using off-axis electron holography. Simulations of the potential profiles assuming no unintentional impurities in the undoped regions of the samples show small discrepancies with experiment. Revised simulations reproduce the measurements accurately, when a p -layer with an 8.4× 1011 cm-2 acceptor density is included at the buffer/substrate interface to simulate the presence of unintentional carbon impurities.

AB - The electrostatic potential profile across AlGaAs/AlAs/GaAs heterostructures containing 1-μm -thick n -doped (or p -doped) AlGaAs layers is measured using off-axis electron holography. Simulations of the potential profiles assuming no unintentional impurities in the undoped regions of the samples show small discrepancies with experiment. Revised simulations reproduce the measurements accurately, when a p -layer with an 8.4× 1011 cm-2 acceptor density is included at the buffer/substrate interface to simulate the presence of unintentional carbon impurities.

UR - http://www.scopus.com/inward/record.url?scp=67649813394&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67649813394&partnerID=8YFLogxK

U2 - 10.1063/1.3062449

DO - 10.1063/1.3062449

M3 - Article

AN - SCOPUS:67649813394

VL - 105

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 1

M1 - 014910

ER -