Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy

Hyun Jun Jo, Geun Hyeong Kim, Jong Su Kim, Mee Yi Ryu, Yung Kee Yeo, Thomas R. Harris, John Kouvetakis

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Temperature- (T-) dependent photoreflectance (PR) measurements have been made for the tensile-strained, undoped Ge0.985Sn0.015 film grown on n-Si substrate by ultra-high vacuum chemical vapor deposition method. The PR spectra at room temperature consist of two signals at around 0.739 and 1.022 eV, which are assigned to the direct transitions from conduction Γ valley to valence and spin-orbit split-off bands, respectively. The T-dependent PR measurements show tensile-strain split direct bandgap transitions from the Γ valley to the light-hole (ELH) and heavy-hole (EHH) bands at energies of 0.772 and 0.803 eV at 12 K, respectively, which are not usually observable from the photoluminescence measurements for relatively high Sn content Ge1-ySny samples. The PR signals for both HH and LH bands are blue shifted and their intensities decrease with increasing temperature, but both LH and HH PR signals persist through 240 K and only one HH PR signal is observed at room temperature. It has been observed that the separation energy between the EHH and ELH increases as T decreases, which clearly indicates an increase in tensile strain as T decreases. From the analysis of the T-dependent separation energy between the ELH and EHH, the T-dependent tensile strain in the Ge0.985Sn0.015 film was obtained, which might not be easily measured using the X-ray diffraction method.

Original languageEnglish (US)
Pages (from-to)83-87
Number of pages5
JournalCurrent Applied Physics
Volume16
Issue number1
DOIs
StatePublished - Jan 1 2016

Fingerprint

Tensile strain
Energy gap
Spectroscopy
spectroscopy
valleys
Temperature
temperature
Ultrahigh vacuum
room temperature
Electron transitions
ultrahigh vacuum
energy
Chemical vapor deposition
Photoluminescence
Orbits
vapor deposition
valence
orbits
photoluminescence
conduction

Keywords

  • GeSn
  • Photoreflectance
  • Strain

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy. / Jo, Hyun Jun; Kim, Geun Hyeong; Kim, Jong Su; Ryu, Mee Yi; Yeo, Yung Kee; Harris, Thomas R.; Kouvetakis, John.

In: Current Applied Physics, Vol. 16, No. 1, 01.01.2016, p. 83-87.

Research output: Contribution to journalArticle

Jo, Hyun Jun ; Kim, Geun Hyeong ; Kim, Jong Su ; Ryu, Mee Yi ; Yeo, Yung Kee ; Harris, Thomas R. ; Kouvetakis, John. / Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy. In: Current Applied Physics. 2016 ; Vol. 16, No. 1. pp. 83-87.
@article{5ec9e492644b4beb84c027e06219d53d,
title = "Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy",
abstract = "Temperature- (T-) dependent photoreflectance (PR) measurements have been made for the tensile-strained, undoped Ge0.985Sn0.015 film grown on n-Si substrate by ultra-high vacuum chemical vapor deposition method. The PR spectra at room temperature consist of two signals at around 0.739 and 1.022 eV, which are assigned to the direct transitions from conduction Γ valley to valence and spin-orbit split-off bands, respectively. The T-dependent PR measurements show tensile-strain split direct bandgap transitions from the Γ valley to the light-hole (ELH) and heavy-hole (EHH) bands at energies of 0.772 and 0.803 eV at 12 K, respectively, which are not usually observable from the photoluminescence measurements for relatively high Sn content Ge1-ySny samples. The PR signals for both HH and LH bands are blue shifted and their intensities decrease with increasing temperature, but both LH and HH PR signals persist through 240 K and only one HH PR signal is observed at room temperature. It has been observed that the separation energy between the EHH and ELH increases as T decreases, which clearly indicates an increase in tensile strain as T decreases. From the analysis of the T-dependent separation energy between the ELH and EHH, the T-dependent tensile strain in the Ge0.985Sn0.015 film was obtained, which might not be easily measured using the X-ray diffraction method.",
keywords = "GeSn, Photoreflectance, Strain",
author = "Jo, {Hyun Jun} and Kim, {Geun Hyeong} and Kim, {Jong Su} and Ryu, {Mee Yi} and Yeo, {Yung Kee} and Harris, {Thomas R.} and John Kouvetakis",
year = "2016",
month = "1",
day = "1",
doi = "10.1016/j.cap.2015.10.014",
language = "English (US)",
volume = "16",
pages = "83--87",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy

AU - Jo, Hyun Jun

AU - Kim, Geun Hyeong

AU - Kim, Jong Su

AU - Ryu, Mee Yi

AU - Yeo, Yung Kee

AU - Harris, Thomas R.

AU - Kouvetakis, John

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Temperature- (T-) dependent photoreflectance (PR) measurements have been made for the tensile-strained, undoped Ge0.985Sn0.015 film grown on n-Si substrate by ultra-high vacuum chemical vapor deposition method. The PR spectra at room temperature consist of two signals at around 0.739 and 1.022 eV, which are assigned to the direct transitions from conduction Γ valley to valence and spin-orbit split-off bands, respectively. The T-dependent PR measurements show tensile-strain split direct bandgap transitions from the Γ valley to the light-hole (ELH) and heavy-hole (EHH) bands at energies of 0.772 and 0.803 eV at 12 K, respectively, which are not usually observable from the photoluminescence measurements for relatively high Sn content Ge1-ySny samples. The PR signals for both HH and LH bands are blue shifted and their intensities decrease with increasing temperature, but both LH and HH PR signals persist through 240 K and only one HH PR signal is observed at room temperature. It has been observed that the separation energy between the EHH and ELH increases as T decreases, which clearly indicates an increase in tensile strain as T decreases. From the analysis of the T-dependent separation energy between the ELH and EHH, the T-dependent tensile strain in the Ge0.985Sn0.015 film was obtained, which might not be easily measured using the X-ray diffraction method.

AB - Temperature- (T-) dependent photoreflectance (PR) measurements have been made for the tensile-strained, undoped Ge0.985Sn0.015 film grown on n-Si substrate by ultra-high vacuum chemical vapor deposition method. The PR spectra at room temperature consist of two signals at around 0.739 and 1.022 eV, which are assigned to the direct transitions from conduction Γ valley to valence and spin-orbit split-off bands, respectively. The T-dependent PR measurements show tensile-strain split direct bandgap transitions from the Γ valley to the light-hole (ELH) and heavy-hole (EHH) bands at energies of 0.772 and 0.803 eV at 12 K, respectively, which are not usually observable from the photoluminescence measurements for relatively high Sn content Ge1-ySny samples. The PR signals for both HH and LH bands are blue shifted and their intensities decrease with increasing temperature, but both LH and HH PR signals persist through 240 K and only one HH PR signal is observed at room temperature. It has been observed that the separation energy between the EHH and ELH increases as T decreases, which clearly indicates an increase in tensile strain as T decreases. From the analysis of the T-dependent separation energy between the ELH and EHH, the T-dependent tensile strain in the Ge0.985Sn0.015 film was obtained, which might not be easily measured using the X-ray diffraction method.

KW - GeSn

KW - Photoreflectance

KW - Strain

UR - http://www.scopus.com/inward/record.url?scp=84946426501&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84946426501&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2015.10.014

DO - 10.1016/j.cap.2015.10.014

M3 - Article

AN - SCOPUS:84946426501

VL - 16

SP - 83

EP - 87

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 1

ER -