Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical-cavity, single pass configuration

K. Yung, J. Yee, J. Koo, M. Rubin, Nathan Newman, J. Ross

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22 Citations (Scopus)

Abstract

An experiment is performed to investigate the stimulated emission from the GaN films grown on sapphire using the ion-assisted molecular beam epitaxy. Based on the experiment, a set of ultraviolet spectra in the vertical cavity is observed. The spectral emission distribution from the GaN films was measured with a 1.0 μm monochromator and the various spectral emissions are shown and discussed in this paper.

Original languageEnglish (US)
Pages (from-to)1135-1137
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number9
DOIs
StatePublished - Jan 1 1994
Externally publishedYes

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spectral emission
stimulated emission
sapphire
molecular beam epitaxy
cavities
ultraviolet spectra
monochromators
configurations
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical-cavity, single pass configuration. / Yung, K.; Yee, J.; Koo, J.; Rubin, M.; Newman, Nathan; Ross, J.

In: Applied Physics Letters, Vol. 64, No. 9, 01.01.1994, p. 1135-1137.

Research output: Contribution to journalArticle

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