Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical-cavity, single pass configuration

K. Yung; J. Yee; J. Koo; M. Rubin; N. Newman; J. Ross

doi:10.1063/1.110830

Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical-cavity, single pass configuration

K. Yung, J. Yee, J. Koo, M. Rubin, N. Newman, J. Ross

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Abstract

We report the first observation of stimulated emission from a GaN film grown by ion-assisted molecular beam epitaxy. The observed near-UV optical emission power was a nonlinear function of the pump power density. The characteristics of the observed stimulated emission are similar to those observed recently from films grown with low-pressure metalorganic chemical vapor deposition techniques.

Original language	English (US)
Pages (from-to)	1135-1137
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	9
DOIs	https://doi.org/10.1063/1.110830
State	Published - Dec 1 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.110830

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title = "Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical-cavity, single pass configuration",

abstract = "We report the first observation of stimulated emission from a GaN film grown by ion-assisted molecular beam epitaxy. The observed near-UV optical emission power was a nonlinear function of the pump power density. The characteristics of the observed stimulated emission are similar to those observed recently from films grown with low-pressure metalorganic chemical vapor deposition techniques.",

author = "K. Yung and J. Yee and J. Koo and M. Rubin and N. Newman and J. Ross",

year = "1994",

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AU - Yung, K.

AU - Yee, J.

AU - Koo, J.

AU - Rubin, M.

AU - Newman, N.

AU - Ross, J.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - We report the first observation of stimulated emission from a GaN film grown by ion-assisted molecular beam epitaxy. The observed near-UV optical emission power was a nonlinear function of the pump power density. The characteristics of the observed stimulated emission are similar to those observed recently from films grown with low-pressure metalorganic chemical vapor deposition techniques.

AB - We report the first observation of stimulated emission from a GaN film grown by ion-assisted molecular beam epitaxy. The observed near-UV optical emission power was a nonlinear function of the pump power density. The characteristics of the observed stimulated emission are similar to those observed recently from films grown with low-pressure metalorganic chemical vapor deposition techniques.

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Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical-cavity, single pass configuration

Abstract

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