An experiment is performed to investigate the stimulated emission from the GaN films grown on sapphire using the ion-assisted molecular beam epitaxy. Based on the experiment, a set of ultraviolet spectra in the vertical cavity is observed. The spectral emission distribution from the GaN films was measured with a 1.0 μm monochromator and the various spectral emissions are shown and discussed in this paper.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)