We report the first observation of stimulated emission from a GaN film grown by ion-assisted molecular beam epitaxy. The observed near-UV optical emission power was a nonlinear function of the pump power density. The characteristics of the observed stimulated emission are similar to those observed recently from films grown with low-pressure metalorganic chemical vapor deposition techniques.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Dec 1 1994|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)