Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical-cavity, single pass configuration

K. Yung, J. Yee, J. Koo, M. Rubin, N. Newman, J. Ross

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

We report the first observation of stimulated emission from a GaN film grown by ion-assisted molecular beam epitaxy. The observed near-UV optical emission power was a nonlinear function of the pump power density. The characteristics of the observed stimulated emission are similar to those observed recently from films grown with low-pressure metalorganic chemical vapor deposition techniques.

Original languageEnglish (US)
Pages (from-to)1135-1137
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number9
DOIs
StatePublished - Dec 1 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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