Observation of negative differential conductivity in a FET with structured gate

G. Bernstein, D. K. Ferry

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Using electron beam lithography, we have fabricated a novel quantum device in which a lateral surface superlattice (LSSL) replaces the gate of a high electron mobility transistor (HEMT). We have observed strong negative differential conductivity (NDC) which we believe could be due to the onset of Bloch oscillations. Other devices, identical in all ways except that the gates are solid instead of grid-like as in the BlochFET, did not show NDC. Alternative explanations for the NDC are discussed and discounted for various reasons.

Original languageEnglish (US)
Pages (from-to)449-452
Number of pages4
JournalZeitschrift für Physik B Condensed Matter
Volume67
Issue number4
DOIs
StatePublished - Dec 1987

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Electron beam lithography
High electron mobility transistors
Field effect transistors
field effect transistors
conductivity
high electron mobility transistors
lithography
grids
electron beams
oscillations

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Observation of negative differential conductivity in a FET with structured gate. / Bernstein, G.; Ferry, D. K.

In: Zeitschrift für Physik B Condensed Matter, Vol. 67, No. 4, 12.1987, p. 449-452.

Research output: Contribution to journalArticle

@article{388179c5a3234984bfebe8be8edee260,
title = "Observation of negative differential conductivity in a FET with structured gate",
abstract = "Using electron beam lithography, we have fabricated a novel quantum device in which a lateral surface superlattice (LSSL) replaces the gate of a high electron mobility transistor (HEMT). We have observed strong negative differential conductivity (NDC) which we believe could be due to the onset of Bloch oscillations. Other devices, identical in all ways except that the gates are solid instead of grid-like as in the BlochFET, did not show NDC. Alternative explanations for the NDC are discussed and discounted for various reasons.",
author = "G. Bernstein and Ferry, {D. K.}",
year = "1987",
month = "12",
doi = "10.1007/BF01304112",
language = "English (US)",
volume = "67",
pages = "449--452",
journal = "Zeitschrift für Physik B Condensed Matter and Quanta",
issn = "0340-224X",
publisher = "Springer New York",
number = "4",

}

TY - JOUR

T1 - Observation of negative differential conductivity in a FET with structured gate

AU - Bernstein, G.

AU - Ferry, D. K.

PY - 1987/12

Y1 - 1987/12

N2 - Using electron beam lithography, we have fabricated a novel quantum device in which a lateral surface superlattice (LSSL) replaces the gate of a high electron mobility transistor (HEMT). We have observed strong negative differential conductivity (NDC) which we believe could be due to the onset of Bloch oscillations. Other devices, identical in all ways except that the gates are solid instead of grid-like as in the BlochFET, did not show NDC. Alternative explanations for the NDC are discussed and discounted for various reasons.

AB - Using electron beam lithography, we have fabricated a novel quantum device in which a lateral surface superlattice (LSSL) replaces the gate of a high electron mobility transistor (HEMT). We have observed strong negative differential conductivity (NDC) which we believe could be due to the onset of Bloch oscillations. Other devices, identical in all ways except that the gates are solid instead of grid-like as in the BlochFET, did not show NDC. Alternative explanations for the NDC are discussed and discounted for various reasons.

UR - http://www.scopus.com/inward/record.url?scp=34250107675&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250107675&partnerID=8YFLogxK

U2 - 10.1007/BF01304112

DO - 10.1007/BF01304112

M3 - Article

AN - SCOPUS:34250107675

VL - 67

SP - 449

EP - 452

JO - Zeitschrift für Physik B Condensed Matter and Quanta

JF - Zeitschrift für Physik B Condensed Matter and Quanta

SN - 0340-224X

IS - 4

ER -