Observation of multiple precipitate layers in MeV Au++-implanted silicon

T. L. Alford; N. D. Theodore; E. L. Fleischer; J. W. Mayer; C. B. Carter; P. Børgesen; B. M. Ullrich; N. W. Cheung; H. Wong

doi:10.1063/1.103103

Observation of multiple precipitate layers in MeV Au⁺⁺-implanted silicon

T. L. Alford, N. D. Theodore, E. L. Fleischer, J. W. Mayer, C. B. Carter, P. Børgesen, B. M. Ullrich, N. W. Cheung, H. Wong

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Room-temperature MeV Au⁺⁺ implantation into silicon with energies above 1.8 MeV shows a splitting of the Au concentration profile in the Rutherford backscattering spectrometry (RBS) spectra. Cross-section transmission electron microscopy micrographs show two distinct regions of Au precipitates corresponding to the peaks in the RBS spectra. The double peaks can be explained by the segregation of Au into the highly damaged region near the end of the implant range and Au segregation along a dislocation network. These dislocations arise from dynamic beam annealing during the implant and act as paths for rapid diffusion. Precipitation occurs when the Au concentration exceeds the solubility limit. Lower energy implants resulted in the expected Gaussian distributions.

Original language	English (US)
Pages (from-to)	1796-1798
Number of pages	3
Journal	Applied Physics Letters
Volume	56
Issue number	18
DOIs	https://doi.org/10.1063/1.103103
State	Published - 1990
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.103103

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@article{9174d53eb02747e7914a85bc2e1e483d,

title = "Observation of multiple precipitate layers in MeV Au++-implanted silicon",

abstract = "Room-temperature MeV Au++ implantation into silicon with energies above 1.8 MeV shows a splitting of the Au concentration profile in the Rutherford backscattering spectrometry (RBS) spectra. Cross-section transmission electron microscopy micrographs show two distinct regions of Au precipitates corresponding to the peaks in the RBS spectra. The double peaks can be explained by the segregation of Au into the highly damaged region near the end of the implant range and Au segregation along a dislocation network. These dislocations arise from dynamic beam annealing during the implant and act as paths for rapid diffusion. Precipitation occurs when the Au concentration exceeds the solubility limit. Lower energy implants resulted in the expected Gaussian distributions.",

author = "Alford, {T. L.} and Theodore, {N. D.} and Fleischer, {E. L.} and Mayer, {J. W.} and Carter, {C. B.} and P. B{\o}rgesen and Ullrich, {B. M.} and Cheung, {N. W.} and H. Wong",

year = "1990",

doi = "10.1063/1.103103",

language = "English (US)",

volume = "56",

pages = "1796--1798",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "18",

}

TY - JOUR

T1 - Observation of multiple precipitate layers in MeV Au++-implanted silicon

AU - Alford, T. L.

AU - Theodore, N. D.

AU - Fleischer, E. L.

AU - Mayer, J. W.

AU - Carter, C. B.

AU - Børgesen, P.

AU - Ullrich, B. M.

AU - Cheung, N. W.

AU - Wong, H.

PY - 1990

Y1 - 1990

N2 - Room-temperature MeV Au++ implantation into silicon with energies above 1.8 MeV shows a splitting of the Au concentration profile in the Rutherford backscattering spectrometry (RBS) spectra. Cross-section transmission electron microscopy micrographs show two distinct regions of Au precipitates corresponding to the peaks in the RBS spectra. The double peaks can be explained by the segregation of Au into the highly damaged region near the end of the implant range and Au segregation along a dislocation network. These dislocations arise from dynamic beam annealing during the implant and act as paths for rapid diffusion. Precipitation occurs when the Au concentration exceeds the solubility limit. Lower energy implants resulted in the expected Gaussian distributions.

AB - Room-temperature MeV Au++ implantation into silicon with energies above 1.8 MeV shows a splitting of the Au concentration profile in the Rutherford backscattering spectrometry (RBS) spectra. Cross-section transmission electron microscopy micrographs show two distinct regions of Au precipitates corresponding to the peaks in the RBS spectra. The double peaks can be explained by the segregation of Au into the highly damaged region near the end of the implant range and Au segregation along a dislocation network. These dislocations arise from dynamic beam annealing during the implant and act as paths for rapid diffusion. Precipitation occurs when the Au concentration exceeds the solubility limit. Lower energy implants resulted in the expected Gaussian distributions.

UR - http://www.scopus.com/inward/record.url?scp=0001657672&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001657672&partnerID=8YFLogxK

U2 - 10.1063/1.103103

DO - 10.1063/1.103103

M3 - Article

AN - SCOPUS:0001657672

SN - 0003-6951

VL - 56

SP - 1796

EP - 1798

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Observation of multiple precipitate layers in MeV Au⁺⁺-implanted silicon

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