Observation of multiple precipitate layers in MeV Au++-implanted silicon

Terry Alford, N. D. Theodore, E. L. Fleischer, J. W. Mayer, C. B. Carter, P. Børgesen, B. M. Ullrich, N. W. Cheung, H. Wong

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Room-temperature MeV Au++ implantation into silicon with energies above 1.8 MeV shows a splitting of the Au concentration profile in the Rutherford backscattering spectrometry (RBS) spectra. Cross-section transmission electron microscopy micrographs show two distinct regions of Au precipitates corresponding to the peaks in the RBS spectra. The double peaks can be explained by the segregation of Au into the highly damaged region near the end of the implant range and Au segregation along a dislocation network. These dislocations arise from dynamic beam annealing during the implant and act as paths for rapid diffusion. Precipitation occurs when the Au concentration exceeds the solubility limit. Lower energy implants resulted in the expected Gaussian distributions.

Original languageEnglish (US)
Pages (from-to)1796-1798
Number of pages3
JournalApplied Physics Letters
Volume56
Issue number18
DOIs
StatePublished - 1990
Externally publishedYes

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precipitates
backscattering
silicon
normal density functions
spectroscopy
implantation
solubility
transmission electron microscopy
annealing
energy
cross sections
room temperature
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Alford, T., Theodore, N. D., Fleischer, E. L., Mayer, J. W., Carter, C. B., Børgesen, P., ... Wong, H. (1990). Observation of multiple precipitate layers in MeV Au++-implanted silicon. Applied Physics Letters, 56(18), 1796-1798. https://doi.org/10.1063/1.103103

Observation of multiple precipitate layers in MeV Au++-implanted silicon. / Alford, Terry; Theodore, N. D.; Fleischer, E. L.; Mayer, J. W.; Carter, C. B.; Børgesen, P.; Ullrich, B. M.; Cheung, N. W.; Wong, H.

In: Applied Physics Letters, Vol. 56, No. 18, 1990, p. 1796-1798.

Research output: Contribution to journalArticle

Alford, T, Theodore, ND, Fleischer, EL, Mayer, JW, Carter, CB, Børgesen, P, Ullrich, BM, Cheung, NW & Wong, H 1990, 'Observation of multiple precipitate layers in MeV Au++-implanted silicon', Applied Physics Letters, vol. 56, no. 18, pp. 1796-1798. https://doi.org/10.1063/1.103103
Alford T, Theodore ND, Fleischer EL, Mayer JW, Carter CB, Børgesen P et al. Observation of multiple precipitate layers in MeV Au++-implanted silicon. Applied Physics Letters. 1990;56(18):1796-1798. https://doi.org/10.1063/1.103103
Alford, Terry ; Theodore, N. D. ; Fleischer, E. L. ; Mayer, J. W. ; Carter, C. B. ; Børgesen, P. ; Ullrich, B. M. ; Cheung, N. W. ; Wong, H. / Observation of multiple precipitate layers in MeV Au++-implanted silicon. In: Applied Physics Letters. 1990 ; Vol. 56, No. 18. pp. 1796-1798.
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