Observation of hole accumulation in Ge/Si core/shell nanowires using off-axis electron holography

Luying Li, David Smith, Eric Dailey, Prashanth Madras, Jeffery Drucker, Martha McCartney

Research output: Contribution to journalArticle

41 Scopus citations

Abstract

Hole accumulation in Ge/Si core/shell nanowires (NWs) has been observed and quantified using off-axis electron holography and other electron microscopy techniques. The epitaxial 〈110〉-oriented Ge/Si core/shell NWs were grown on Si (111) substrates by chemical vapor deposition through the vapor-liquid-solid growth mechanism. High-angle annular-dark-field scanning transmission electron microscopy images and off-axis electron holograms were obtained from specific NWs. The excess phase shifts measured by electron holography across the NWs indicated the presence of holes inside the Ge cores. Calculations based on a simplified coaxial cylindrical model gave hole densities of (0.4 ± 0.2) /nm3 in the core regions.

Original languageEnglish (US)
Pages (from-to)493-497
Number of pages5
JournalNano Letters
Volume11
Issue number2
DOIs
StatePublished - Feb 9 2011

Keywords

  • Core/shell nanowires
  • hole accumulation
  • off-axis electron holography

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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