39 Citations (Scopus)

Abstract

Hole accumulation in Ge/Si core/shell nanowires (NWs) has been observed and quantified using off-axis electron holography and other electron microscopy techniques. The epitaxial 〈110〉-oriented Ge/Si core/shell NWs were grown on Si (111) substrates by chemical vapor deposition through the vapor-liquid-solid growth mechanism. High-angle annular-dark-field scanning transmission electron microscopy images and off-axis electron holograms were obtained from specific NWs. The excess phase shifts measured by electron holography across the NWs indicated the presence of holes inside the Ge cores. Calculations based on a simplified coaxial cylindrical model gave hole densities of (0.4 ± 0.2) /nm3 in the core regions.

Original languageEnglish (US)
Pages (from-to)493-497
Number of pages5
JournalNano Letters
Volume11
Issue number2
DOIs
StatePublished - Feb 9 2011

Fingerprint

Electron holography
holography
Nanowires
nanowires
electrons
Holograms
Phase shift
Electron microscopy
Chemical vapor deposition
electron microscopy
phase shift
Vapors
vapor deposition
vapors
Transmission electron microscopy
transmission electron microscopy
Scanning electron microscopy
scanning electron microscopy
Electrons
Liquids

Keywords

  • Core/shell nanowires
  • hole accumulation
  • off-axis electron holography

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Observation of hole accumulation in Ge/Si core/shell nanowires using off-axis electron holography. / Li, Luying; Smith, David; Dailey, Eric; Madras, Prashanth; Drucker, Jeffery; McCartney, Martha.

In: Nano Letters, Vol. 11, No. 2, 09.02.2011, p. 493-497.

Research output: Contribution to journalArticle

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T1 - Observation of hole accumulation in Ge/Si core/shell nanowires using off-axis electron holography

AU - Li, Luying

AU - Smith, David

AU - Dailey, Eric

AU - Madras, Prashanth

AU - Drucker, Jeffery

AU - McCartney, Martha

PY - 2011/2/9

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N2 - Hole accumulation in Ge/Si core/shell nanowires (NWs) has been observed and quantified using off-axis electron holography and other electron microscopy techniques. The epitaxial 〈110〉-oriented Ge/Si core/shell NWs were grown on Si (111) substrates by chemical vapor deposition through the vapor-liquid-solid growth mechanism. High-angle annular-dark-field scanning transmission electron microscopy images and off-axis electron holograms were obtained from specific NWs. The excess phase shifts measured by electron holography across the NWs indicated the presence of holes inside the Ge cores. Calculations based on a simplified coaxial cylindrical model gave hole densities of (0.4 ± 0.2) /nm3 in the core regions.

AB - Hole accumulation in Ge/Si core/shell nanowires (NWs) has been observed and quantified using off-axis electron holography and other electron microscopy techniques. The epitaxial 〈110〉-oriented Ge/Si core/shell NWs were grown on Si (111) substrates by chemical vapor deposition through the vapor-liquid-solid growth mechanism. High-angle annular-dark-field scanning transmission electron microscopy images and off-axis electron holograms were obtained from specific NWs. The excess phase shifts measured by electron holography across the NWs indicated the presence of holes inside the Ge cores. Calculations based on a simplified coaxial cylindrical model gave hole densities of (0.4 ± 0.2) /nm3 in the core regions.

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