Electronic Raman scattering experiments have been carried out on both molecular beam epitaxy and metal-organic chemical vapor deposition-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (full width at half maximum≅15 cm-1) observed at around 841 cm-1 is attributed to the electronic Raman scattering from neutral Mg impurities in Mg-doped GaN. Our experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about one-half of its binding energy.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)