Observation of electron and hole velocity overshoots in an Al 0.3Ga0.7As-based p-i-n semiconductor nanostructure

W. Liang, Kong-Thon Tsen, D. K. Ferry

Research output: Contribution to journalArticlepeer-review


We report experimental results on simultaneous measurement of electron as well as hole transient transport in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure by using picosecond/subpicosecond Raman spectroscopy. Electron and hole velocity overshoots are directly observed. These experimental results are discussed and explained.

Original languageEnglish (US)
Pages (from-to)S20-S22
JournalSemiconductor Science and Technology
Issue number4 SPEC. ISS.
StatePublished - Apr 1 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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