Observation of electron and hole velocity overshoots in an Al 0.3Ga0.7As-based p-i-n semiconductor nanostructure

W. Liang, Kong-Thon Tsen, D. K. Ferry

Research output: Contribution to journalArticle

Abstract

We report experimental results on simultaneous measurement of electron as well as hole transient transport in an Al0.3Ga0.7As-based p-i-n semiconductor nanostructure by using picosecond/subpicosecond Raman spectroscopy. Electron and hole velocity overshoots are directly observed. These experimental results are discussed and explained.

Original languageEnglish (US)
JournalSemiconductor Science and Technology
Volume19
Issue number4 SPEC. ISS.
DOIs
StatePublished - Apr 2004

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Nanostructures
Semiconductor materials
Electrons
Raman spectroscopy
electrons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Observation of electron and hole velocity overshoots in an Al 0.3Ga0.7As-based p-i-n semiconductor nanostructure. / Liang, W.; Tsen, Kong-Thon; Ferry, D. K.

In: Semiconductor Science and Technology, Vol. 19, No. 4 SPEC. ISS., 04.2004.

Research output: Contribution to journalArticle

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