Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

Lin Zhou, Martha McCartney, David Smith, Anas Mouti, E. Feltin, J. F. Carlin, N. Grandjean

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/ Al2 O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexagonal apexes, which nucleate on screw-component threading dislocations, are observed at the film surface. The hexagonal apexes are bounded by { 11 2- 1 } planes, whereas the dodecagons are bounded by { 10 1- 1 } and { 11 2- 1 } planes, where the { 10 1- 1 } facets are generated from the edges between adjacent { 11 2- 1 } planes. Indium segregation is observed along these edges. A possible reason for formation of these defects is briefly discussed.

Original languageEnglish (US)
Article number161902
JournalApplied Physics Letters
Volume97
Issue number16
DOIs
StatePublished - Oct 18 2010

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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