Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

Lin Zhou, Martha McCartney, David Smith, Anas Mouti, E. Feltin, J. F. Carlin, N. Grandjean

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/ Al2 O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexagonal apexes, which nucleate on screw-component threading dislocations, are observed at the film surface. The hexagonal apexes are bounded by { 11 2- 1 } planes, whereas the dodecagons are bounded by { 10 1- 1 } and { 11 2- 1 } planes, where the { 10 1- 1 } facets are generated from the edges between adjacent { 11 2- 1 } planes. Indium segregation is observed along these edges. A possible reason for formation of these defects is briefly discussed.

Original languageEnglish (US)
Article number161902
JournalApplied Physics Letters
Volume97
Issue number16
DOIs
StatePublished - Oct 18 2010

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apexes
quantum wells
defects
screws
vapor phase epitaxy
indium
flat surfaces
templates
transmission electron microscopy
microstructure

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells. / Zhou, Lin; McCartney, Martha; Smith, David; Mouti, Anas; Feltin, E.; Carlin, J. F.; Grandjean, N.

In: Applied Physics Letters, Vol. 97, No. 16, 161902, 18.10.2010.

Research output: Contribution to journalArticle

Zhou, Lin ; McCartney, Martha ; Smith, David ; Mouti, Anas ; Feltin, E. ; Carlin, J. F. ; Grandjean, N. / Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells. In: Applied Physics Letters. 2010 ; Vol. 97, No. 16.
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