Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

Lin Zhou; Martha McCartney; David Smith; Anas Mouti; E. Feltin; J. F. Carlin; N. Grandjean

doi:10.1063/1.3502483

Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

Lin Zhou, Martha McCartney, David Smith, Anas Mouti, E. Feltin, J. F. Carlin, N. Grandjean

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Abstract

The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/ Al₂ O₃ (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexagonal apexes, which nucleate on screw-component threading dislocations, are observed at the film surface. The hexagonal apexes are bounded by { 11 2- 1 } planes, whereas the dodecagons are bounded by { 10 1- 1 } and { 11 2- 1 } planes, where the { 10 1- 1 } facets are generated from the edges between adjacent { 11 2- 1 } planes. Indium segregation is observed along these edges. A possible reason for formation of these defects is briefly discussed.

Original language	English (US)
Article number	161902
Journal	Applied Physics Letters
Volume	97
Issue number	16
DOIs	https://doi.org/10.1063/1.3502483
State	Published - Oct 18 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3502483

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@article{bc45876daec444f7bcec14e99f895f86,

title = "Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells",

abstract = "The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/ Al2 O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexagonal apexes, which nucleate on screw-component threading dislocations, are observed at the film surface. The hexagonal apexes are bounded by { 11 2- 1 } planes, whereas the dodecagons are bounded by { 10 1- 1 } and { 11 2- 1 } planes, where the { 10 1- 1 } facets are generated from the edges between adjacent { 11 2- 1 } planes. Indium segregation is observed along these edges. A possible reason for formation of these defects is briefly discussed.",

author = "Lin Zhou and Martha McCartney and David Smith and Anas Mouti and E. Feltin and Carlin, {J. F.} and N. Grandjean",

note = "Funding Information: This work was partially supported by the NCCR Quantum Photonics (NCCR QP), research instrument of the Swiss National Science Foundation (SNSF). We acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.",

year = "2010",

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doi = "10.1063/1.3502483",

language = "English (US)",

volume = "97",

journal = "Applied Physics Letters",

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T1 - Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

AU - Zhou, Lin

AU - McCartney, Martha

AU - Smith, David

AU - Mouti, Anas

AU - Feltin, E.

AU - Carlin, J. F.

AU - Grandjean, N.

N1 - Funding Information: This work was partially supported by the NCCR Quantum Photonics (NCCR QP), research instrument of the Swiss National Science Foundation (SNSF). We acknowledge the use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.

PY - 2010/10/18

Y1 - 2010/10/18

N2 - The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/ Al2 O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexagonal apexes, which nucleate on screw-component threading dislocations, are observed at the film surface. The hexagonal apexes are bounded by { 11 2- 1 } planes, whereas the dodecagons are bounded by { 10 1- 1 } and { 11 2- 1 } planes, where the { 10 1- 1 } facets are generated from the edges between adjacent { 11 2- 1 } planes. Indium segregation is observed along these edges. A possible reason for formation of these defects is briefly discussed.

AB - The microstructure of GaN(Si)/AlInN multiple quantum wells grown on GaN/ Al2 O3 (0001) templates by metalorganic vapor-phase epitaxy has been investigated using transmission electron microscopy and associated techniques. Dodecagon-shape V-defects with hexagonal apexes, which nucleate on screw-component threading dislocations, are observed at the film surface. The hexagonal apexes are bounded by { 11 2- 1 } planes, whereas the dodecagons are bounded by { 10 1- 1 } and { 11 2- 1 } planes, where the { 10 1- 1 } facets are generated from the edges between adjacent { 11 2- 1 } planes. Indium segregation is observed along these edges. A possible reason for formation of these defects is briefly discussed.

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JF - Applied Physics Letters

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Observation of dodecagon-shape V-defects in GaN/AlInN multiple quantum wells

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