Observation of bias-voltage-induced atomic diffusion on a gold STM tip

Hongbin Yu, B. O. Gao, Zheng Gai, Wei Sheng Yang

Research output: Contribution to journalArticle

Abstract

By gradually varying the bias voltage between the gold tip and the gold sample, it is observed with the scanning tunneling microscope that large bias voltages may induce atoms to diffuse on the gold tip and ofter result in an increasing of the tip length. We also observed the field emission and resonant tunneling phenomena. A mechanism based on the polarization of the tip is proposed for the field-induced atomic diffusion. Such field-induced diffusion is believed to be responsible for surface modification with large bias voltage pulses.

Original languageEnglish (US)
Pages (from-to)686-687
Number of pages2
JournalWuli Xuebao/Acta Physica Sinica
Volume46
Issue number4
StatePublished - 1997
Externally publishedYes

Fingerprint

gold
electric potential
resonant tunneling
field emission
microscopes
scanning
polarization
pulses
atoms

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Observation of bias-voltage-induced atomic diffusion on a gold STM tip. / Yu, Hongbin; Gao, B. O.; Gai, Zheng; Yang, Wei Sheng.

In: Wuli Xuebao/Acta Physica Sinica, Vol. 46, No. 4, 1997, p. 686-687.

Research output: Contribution to journalArticle

Yu, Hongbin ; Gao, B. O. ; Gai, Zheng ; Yang, Wei Sheng. / Observation of bias-voltage-induced atomic diffusion on a gold STM tip. In: Wuli Xuebao/Acta Physica Sinica. 1997 ; Vol. 46, No. 4. pp. 686-687.
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