Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence

Keun Yong Ban; Darius Kuciauskas; Stephen P. Bremner; Christiana Honsberg

doi:10.1063/1.4717766

Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence

Keun Yong Ban, Darius Kuciauskas, Stephen P. Bremner, Christiana Honsberg

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Abstract

The band alignment of InAs quantum dots (QDs) embedded in GaAsSb barriers with various Sb compositions is investigated by photoluminescence (PL) measurements. InAs/GaAsSb samples with 13 and 15 Sb compositions show distinct differences in emission spectra as the PL excitation power increases. Whilst no discernible shift is seen for the 13 sample, a blue-shift of PL spectra following a 1/3 exponent of the excitation power is observed for the 15 sample suggesting a transition from a type I to type II band alignment. Time-resolved PL data show a significant increase in carrier lifetime as the Sb composition increases between 13 and 15 implying that the transformation from a type I to type II band alignment occurs between 13 and 15 Sb compositions. These results taken together lead to the conclusion that a zero valence band offset (VBO) can be achieved for the InAs/GaAsSb system in the vicinity of 14 Sb composition.

Original language	English (US)
Article number	104302
Journal	Journal of Applied Physics
Volume	111
Issue number	10
DOIs	https://doi.org/10.1063/1.4717766
State	Published - May 15 2012

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.4717766

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title = "Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence",

abstract = "The band alignment of InAs quantum dots (QDs) embedded in GaAsSb barriers with various Sb compositions is investigated by photoluminescence (PL) measurements. InAs/GaAsSb samples with 13 and 15 Sb compositions show distinct differences in emission spectra as the PL excitation power increases. Whilst no discernible shift is seen for the 13 sample, a blue-shift of PL spectra following a 1/3 exponent of the excitation power is observed for the 15 sample suggesting a transition from a type I to type II band alignment. Time-resolved PL data show a significant increase in carrier lifetime as the Sb composition increases between 13 and 15 implying that the transformation from a type I to type II band alignment occurs between 13 and 15 Sb compositions. These results taken together lead to the conclusion that a zero valence band offset (VBO) can be achieved for the InAs/GaAsSb system in the vicinity of 14 Sb composition.",

author = "Ban, {Keun Yong} and Darius Kuciauskas and Bremner, {Stephen P.} and Christiana Honsberg",

note = "Funding Information: This work is in part supported by the National Science Foundation and Department of Energy under Cooperative Agreement No. EEC-1041895.",

year = "2012",

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doi = "10.1063/1.4717766",

language = "English (US)",

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journal = "Journal of Applied Physics",

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T1 - Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence

AU - Ban, Keun Yong

AU - Kuciauskas, Darius

AU - Bremner, Stephen P.

AU - Honsberg, Christiana

N1 - Funding Information: This work is in part supported by the National Science Foundation and Department of Energy under Cooperative Agreement No. EEC-1041895.

PY - 2012/5/15

Y1 - 2012/5/15

N2 - The band alignment of InAs quantum dots (QDs) embedded in GaAsSb barriers with various Sb compositions is investigated by photoluminescence (PL) measurements. InAs/GaAsSb samples with 13 and 15 Sb compositions show distinct differences in emission spectra as the PL excitation power increases. Whilst no discernible shift is seen for the 13 sample, a blue-shift of PL spectra following a 1/3 exponent of the excitation power is observed for the 15 sample suggesting a transition from a type I to type II band alignment. Time-resolved PL data show a significant increase in carrier lifetime as the Sb composition increases between 13 and 15 implying that the transformation from a type I to type II band alignment occurs between 13 and 15 Sb compositions. These results taken together lead to the conclusion that a zero valence band offset (VBO) can be achieved for the InAs/GaAsSb system in the vicinity of 14 Sb composition.

AB - The band alignment of InAs quantum dots (QDs) embedded in GaAsSb barriers with various Sb compositions is investigated by photoluminescence (PL) measurements. InAs/GaAsSb samples with 13 and 15 Sb compositions show distinct differences in emission spectra as the PL excitation power increases. Whilst no discernible shift is seen for the 13 sample, a blue-shift of PL spectra following a 1/3 exponent of the excitation power is observed for the 15 sample suggesting a transition from a type I to type II band alignment. Time-resolved PL data show a significant increase in carrier lifetime as the Sb composition increases between 13 and 15 implying that the transformation from a type I to type II band alignment occurs between 13 and 15 Sb compositions. These results taken together lead to the conclusion that a zero valence band offset (VBO) can be achieved for the InAs/GaAsSb system in the vicinity of 14 Sb composition.

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Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence

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