Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, D. Lombardo, I. Agha, John Kouvetakis, Jose Menendez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Room temperature amplified spontaneous emission at mid-IR has been observed from optically pumped GeSn waveguides on Si. For higher pump power, emission spectrum indicates the direct band to indirect band emission intensity ratio increases and the peak value increases nonlinearly due to the material gain.

Original languageEnglish (US)
Title of host publicationIEEE Photonics Society Summer Topicals Meeting Series, SUM 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages35-36
Number of pages2
ISBN (Print)9781538653432
DOIs
StatePublished - Sep 5 2018
Event2018 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018 - Waikoloa, United States
Duration: Jul 9 2018Jul 11 2018

Other

Other2018 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018
CountryUnited States
CityWaikoloa
Period7/9/187/11/18

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ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Mathews, J., Li, Z., Zhao, Y., Gallagher, J. D., Lombardo, D., Agha, I., Kouvetakis, J., & Menendez, J. (2018). Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature. In IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018 (pp. 35-36). [8456690] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PHOSST.2018.8456690