Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature

J. Mathews; Z. Li; Y. Zhao; J. D. Gallagher; D. Lombardo; I. Agha; John Kouvetakis; Jose Menendez

doi:10.1109/PHOSST.2018.8456690

Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature

J. Mathews, Z. Li, Y. Zhao, J. D. Gallagher, D. Lombardo, I. Agha, John Kouvetakis, Jose Menendez

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Room temperature amplified spontaneous emission at mid-IR has been observed from optically pumped GeSn waveguides on Si. For higher pump power, emission spectrum indicates the direct band to indirect band emission intensity ratio increases and the peak value increases nonlinearly due to the material gain.

Original language	English (US)
Title of host publication	IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	35-36
Number of pages	2
ISBN (Print)	9781538653432
DOIs	https://doi.org/10.1109/PHOSST.2018.8456690
State	Published - Sep 5 2018
Event	2018 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018 - Waikoloa, United States Duration: Jul 9 2018 → Jul 11 2018

Other

Other	2018 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018
Country/Territory	United States
City	Waikoloa
Period	7/9/18 → 7/11/18

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

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10.1109/PHOSST.2018.8456690

Cite this

Mathews, J., Li, Z., Zhao, Y., Gallagher, J. D., Lombardo, D., Agha, I., Kouvetakis, J., & Menendez, J. (2018). Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature. In IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018 (pp. 35-36). [8456690] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PHOSST.2018.8456690

Mathews, J, Li, Z, Zhao, Y, Gallagher, JD, Lombardo, D, Agha, I, Kouvetakis, J & Menendez, J 2018, Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature. in IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018., 8456690, Institute of Electrical and Electronics Engineers Inc., pp. 35-36, 2018 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018, Waikoloa, United States, 7/9/18. https://doi.org/10.1109/PHOSST.2018.8456690

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title = "Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature",

abstract = "Room temperature amplified spontaneous emission at mid-IR has been observed from optically pumped GeSn waveguides on Si. For higher pump power, emission spectrum indicates the direct band to indirect band emission intensity ratio increases and the peak value increases nonlinearly due to the material gain.",

author = "J. Mathews and Z. Li and Y. Zhao and Gallagher, {J. D.} and D. Lombardo and I. Agha and John Kouvetakis and Jose Menendez",

year = "2018",

month = sep,

day = "5",

doi = "10.1109/PHOSST.2018.8456690",

language = "English (US)",

isbn = "9781538653432",

pages = "35--36",

booktitle = "IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018",

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note = "2018 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018 ; Conference date: 09-07-2018 Through 11-07-2018",

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T1 - Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature

AU - Mathews, J.

AU - Li, Z.

AU - Zhao, Y.

AU - Gallagher, J. D.

AU - Lombardo, D.

AU - Agha, I.

AU - Kouvetakis, John

AU - Menendez, Jose

PY - 2018/9/5

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N2 - Room temperature amplified spontaneous emission at mid-IR has been observed from optically pumped GeSn waveguides on Si. For higher pump power, emission spectrum indicates the direct band to indirect band emission intensity ratio increases and the peak value increases nonlinearly due to the material gain.

AB - Room temperature amplified spontaneous emission at mid-IR has been observed from optically pumped GeSn waveguides on Si. For higher pump power, emission spectrum indicates the direct band to indirect band emission intensity ratio increases and the peak value increases nonlinearly due to the material gain.

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DO - 10.1109/PHOSST.2018.8456690

M3 - Conference contribution

AN - SCOPUS:85054159288

SN - 9781538653432

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BT - IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018

Y2 - 9 July 2018 through 11 July 2018

ER -

Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature

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