Abstract
Room temperature amplified spontaneous emission at mid-IR has been observed from optically pumped GeSn waveguides on Si. For higher pump power, emission spectrum indicates the direct band to indirect band emission intensity ratio increases and the peak value increases nonlinearly due to the material gain.
| Original language | English (US) |
|---|---|
| Title of host publication | IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 35-36 |
| Number of pages | 2 |
| ISBN (Print) | 9781538653432 |
| DOIs | |
| State | Published - Sep 5 2018 |
| Event | 2018 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018 - Waikoloa, United States Duration: Jul 9 2018 → Jul 11 2018 |
Other
| Other | 2018 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018 |
|---|---|
| Country | United States |
| City | Waikoloa |
| Period | 7/9/18 → 7/11/18 |
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ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
Cite this
Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature. / Mathews, J.; Li, Z.; Zhao, Y.; Gallagher, J. D.; Lombardo, D.; Agha, I.; Kouvetakis, John; Menendez, Jose.
IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 35-36 8456690.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Observation of Amplified Spontaneous Emission in GeSn Waveguides at Room Temperature
AU - Mathews, J.
AU - Li, Z.
AU - Zhao, Y.
AU - Gallagher, J. D.
AU - Lombardo, D.
AU - Agha, I.
AU - Kouvetakis, John
AU - Menendez, Jose
PY - 2018/9/5
Y1 - 2018/9/5
N2 - Room temperature amplified spontaneous emission at mid-IR has been observed from optically pumped GeSn waveguides on Si. For higher pump power, emission spectrum indicates the direct band to indirect band emission intensity ratio increases and the peak value increases nonlinearly due to the material gain.
AB - Room temperature amplified spontaneous emission at mid-IR has been observed from optically pumped GeSn waveguides on Si. For higher pump power, emission spectrum indicates the direct band to indirect band emission intensity ratio increases and the peak value increases nonlinearly due to the material gain.
UR - http://www.scopus.com/inward/record.url?scp=85054159288&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85054159288&partnerID=8YFLogxK
U2 - 10.1109/PHOSST.2018.8456690
DO - 10.1109/PHOSST.2018.8456690
M3 - Conference contribution
AN - SCOPUS:85054159288
SN - 9781538653432
SP - 35
EP - 36
BT - IEEE Photonics Society Summer Topicals Meeting Series, SUM 2018
PB - Institute of Electrical and Electronics Engineers Inc.
ER -