Abstract
This study demonstrates the presence of a negative electron affinity (NEA) surface on AlN was grown on α(6H)-SiC. Heteroepitaxial AlN was grown on α(6H)-SiC(0001) substrates by molecular beam epitaxy techniques. The surface electronic states were characterized by ultraviolet photoemission obtained at surface normal. The observation of a sharp spectral feature at the lowest energy of the emitted electrons is an indication of a surface with a negative electron affinity. In addition, the trend of the NEA feature was examined as a function of annealing. The surface Fermi level is found to be near the middle of the AlN gap, and a possible band alignment between the AlN and SiC is presented.
Original language | English (US) |
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Pages (from-to) | 3288-3290 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 64 |
Issue number | 24 |
DOIs | |
State | Published - 1994 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)