Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)

M. C. Benjamin, Cheng Wang, R. F. Davis, R. J. Nemanich

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195 Scopus citations

Abstract

This study demonstrates the presence of a negative electron affinity (NEA) surface on AlN was grown on α(6H)-SiC. Heteroepitaxial AlN was grown on α(6H)-SiC(0001) substrates by molecular beam epitaxy techniques. The surface electronic states were characterized by ultraviolet photoemission obtained at surface normal. The observation of a sharp spectral feature at the lowest energy of the emitted electrons is an indication of a surface with a negative electron affinity. In addition, the trend of the NEA feature was examined as a function of annealing. The surface Fermi level is found to be near the middle of the AlN gap, and a possible band alignment between the AlN and SiC is presented.

Original languageEnglish (US)
Pages (from-to)3288-3290
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number24
DOIs
StatePublished - Dec 1 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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