Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)

M. C. Benjamin, Cheng Wang, R. F. Davis, Robert Nemanich

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Abstract

This study demonstrates the presence of a negative electron affinity (NEA) surface on AlN was grown on α(6H)-SiC. Heteroepitaxial AlN was grown on α(6H)-SiC(0001) substrates by molecular beam epitaxy techniques. The surface electronic states were characterized by ultraviolet photoemission obtained at surface normal. The observation of a sharp spectral feature at the lowest energy of the emitted electrons is an indication of a surface with a negative electron affinity. In addition, the trend of the NEA feature was examined as a function of annealing. The surface Fermi level is found to be near the middle of the AlN gap, and a possible band alignment between the AlN and SiC is presented.

Original languageEnglish (US)
Pages (from-to)3288-3290
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number24
DOIs
StatePublished - 1994
Externally publishedYes

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negative electron affinity
Fermi surfaces
indication
molecular beam epitaxy
photoelectric emission
alignment
trends
annealing
electronics
electrons
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001). / Benjamin, M. C.; Wang, Cheng; Davis, R. F.; Nemanich, Robert.

In: Applied Physics Letters, Vol. 64, No. 24, 1994, p. 3288-3290.

Research output: Contribution to journalArticle

Benjamin, M. C. ; Wang, Cheng ; Davis, R. F. ; Nemanich, Robert. / Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001). In: Applied Physics Letters. 1994 ; Vol. 64, No. 24. pp. 3288-3290.
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