Numerical study on effects of random dopant fluctuation in double gate tunneling FET

Ying Zhu, Yun Ye, Yu Cao, Jin He, Aixi Zhang, Hongyu He, Hao Wang, Chenyue Ma, Yue Hu, Mansun Chan, Xiaoan Zhu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Impacts of random dopant fluctuations (RDFs) on the performance of an optimized double-gate (DG) tunneling FET (TFET) are studied using 3-D device simulations. The sensitivity of the TFET performance with a high-k gate dielectric to RDF is explored in this paper. Sano's approach is used to generate random doping profiles for statistical device simulation. It is found that TFET suffers from dramatic shift and fluctuations in electrical parameters (Vth, gm and SS for instance) due to RDF, thus emerging a further impact on circuit performance.

Original languageEnglish (US)
Title of host publication2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
PublisherIEEE Computer Society
ISBN (Print)9781467325233
DOIs
StatePublished - Dec 23 2013
Event2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 - Hong Kong, Hong Kong
Duration: Jun 3 2013Jun 5 2013

Publication series

Name2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013

Other

Other2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
CountryHong Kong
CityHong Kong
Period6/3/136/5/13

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Keywords

  • Random Dopant Fluctuation (RDF)
  • Tunneling FET
  • double gate (DG)
  • high-k dielectric
  • variability

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Zhu, Y., Ye, Y., Cao, Y., He, J., Zhang, A., He, H., Wang, H., Ma, C., Hu, Y., Chan, M., & Zhu, X. (2013). Numerical study on effects of random dopant fluctuation in double gate tunneling FET. In 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013 [6628040] (2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013). IEEE Computer Society. https://doi.org/10.1109/EDSSC.2013.6628040