Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Xiufang Zhang, Chenyue Ma, Wei Zhao, Chenfei Zhang, Guozeng Wang, Wen Wu, Wenping Wang, Yu Cao, Shengqi Yang, Zhang Yang, Yong Ma, Yun Ye, Yongliang Li, Ruonan Wang, Ruonan Wang, Jin He

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

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Engineering & Materials Science