Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Xiufang Zhang; Chenyue Ma; Wei Zhao; Chenfei Zhang; Guozeng Wang; Wen Wu; Wenping Wang; Yu Cao; Shengqi Yang; Zhang Yang; Yong Ma; Yun Ye; Yongliang Li; Ruonan Wang; Ruonan Wang; Jin He

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Xiufang Zhang, Chenyue Ma, Wei Zhao, Chenfei Zhang, Guozeng Wang, Wen Wu, Wenping Wang, Yu Cao, Shengqi Yang, Zhang Yang, Yong Ma, Yun Ye, Yongliang Li, Ruonan Wang, Ruonan Wang, Jin He

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF is obtained by device simulation. Then the performance of DG MOSFET based 6-T SRAM is evaluated by feeding the results into a compact DG MOSFET model using HSPICE Monte Carlo simulation. The results show that pull down transistor dominates static noise margin (SNM) fluctuation and access transistor dominates write margin (WM) fluctuation.

Original language	English (US)
Title of host publication	Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Pages	172-175
Number of pages	4
State	Published - 2011
Externally published	Yes
Event	Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States Duration: Jun 13 2011 → Jun 16 2011

Publication series

Name	Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Volume	2

Other

Other	Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Country/Territory	United States
City	Boston, MA
Period	6/13/11 → 6/16/11

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering

Cite this

Zhang, X., Ma, C., Zhao, W., Zhang, C., Wang, G., Wu, W., Wang, W., Cao, Y., Yang, S., Yang, Z., Ma, Y., Ye, Y., Li, Y., Wang, R., Wang, R., & He, J. (2011). Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance. In Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 (pp. 172-175). (Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011; Vol. 2).

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance. / Zhang, Xiufang; Ma, Chenyue; Zhao, Wei et al.
Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. 2011. p. 172-175 (Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhang, X, Ma, C, Zhao, W, Zhang, C, Wang, G, Wu, W, Wang, W, Cao, Y, Yang, S, Yang, Z, Ma, Y, Ye, Y, Li, Y, Wang, R, Wang, R & He, J 2011, Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance. in Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011, vol. 2, pp. 172-175, Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011, Boston, MA, United States, 6/13/11.

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title = "Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance",

abstract = "The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF is obtained by device simulation. Then the performance of DG MOSFET based 6-T SRAM is evaluated by feeding the results into a compact DG MOSFET model using HSPICE Monte Carlo simulation. The results show that pull down transistor dominates static noise margin (SNM) fluctuation and access transistor dominates write margin (WM) fluctuation.",

author = "Xiufang Zhang and Chenyue Ma and Wei Zhao and Chenfei Zhang and Guozeng Wang and Wen Wu and Wenping Wang and Yu Cao and Shengqi Yang and Zhang Yang and Yong Ma and Yun Ye and Yongliang Li and Ruonan Wang and Ruonan Wang and Jin He",

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note = "Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 ; Conference date: 13-06-2011 Through 16-06-2011",

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TY - GEN

T1 - Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

AU - Zhang, Xiufang

AU - Ma, Chenyue

AU - Zhao, Wei

AU - Zhang, Chenfei

AU - Wang, Guozeng

AU - Wu, Wen

AU - Wang, Wenping

AU - Cao, Yu

AU - Yang, Shengqi

AU - Yang, Zhang

AU - Ma, Yong

AU - Ye, Yun

AU - Li, Yongliang

AU - Wang, Ruonan

AU - He, Jin

PY - 2011

Y1 - 2011

N2 - The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF is obtained by device simulation. Then the performance of DG MOSFET based 6-T SRAM is evaluated by feeding the results into a compact DG MOSFET model using HSPICE Monte Carlo simulation. The results show that pull down transistor dominates static noise margin (SNM) fluctuation and access transistor dominates write margin (WM) fluctuation.

AB - The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF is obtained by device simulation. Then the performance of DG MOSFET based 6-T SRAM is evaluated by feeding the results into a compact DG MOSFET model using HSPICE Monte Carlo simulation. The results show that pull down transistor dominates static noise margin (SNM) fluctuation and access transistor dominates write margin (WM) fluctuation.

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M3 - Conference contribution

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T3 - Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011

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BT - Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011

T2 - Nanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011

Y2 - 13 June 2011 through 16 June 2011

ER -

Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

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