Numerical study on effect of random dopant fluctuation on double gate MOSFET based 6-T SRAM performance

Xiufang Zhang, Chenyue Ma, Wei Zhao, Chenfei Zhang, Guozeng Wang, Wen Wu, Wenping Wang, Yu Cao, Shengqi Yang, Zhang Yang, Yong Ma, Yun Ye, Yongliang Li, Ruonan Wang, Ruonan Wang, Jin He

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

The random dopant fluctuation (RDF) of double gate (DG) MOSFET based 6-T SRAM is investigated with three-dimensional (3-D) statistical simulation. The doping profile is generated by matlab and the threshold voltage variation due to RDF is obtained by device simulation. Then the performance of DG MOSFET based 6-T SRAM is evaluated by feeding the results into a compact DG MOSFET model using HSPICE Monte Carlo simulation. The results show that pull down transistor dominates static noise margin (SNM) fluctuation and access transistor dominates write margin (WM) fluctuation.

Original languageEnglish (US)
Title of host publicationTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Pages172-175
Number of pages4
StatePublished - Nov 23 2011
Externally publishedYes
EventNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011 - Boston, MA, United States
Duration: Jun 13 2011Jun 16 2011

Publication series

NameTechnical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
Volume2

Other

OtherNanotechnology 2011: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011
CountryUnited States
CityBoston, MA
Period6/13/116/16/11

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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