Abstract
An extension of the classical hydrodynamic model for semiconductor devices to include quantum transport effects is reviewed. This "smooth" quantum hydrodynamic (QHD) model is derived specifically to handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. A conservative upwind discretization of the one-dimensional (1D) steady-state smooth QHD equations is outlined. Smooth QHD model simulations of the resonant tunneling diode are presented which exhibit enhanced negative differential resistance when compared with simulations using the original O(ℏ2) QHD model.
Original language | English (US) |
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Pages (from-to) | 393-401 |
Number of pages | 9 |
Journal | Computer Methods in Applied Mechanics and Engineering |
Volume | 181 |
Issue number | 4 |
DOIs | |
State | Published - Jan 21 2000 |
Keywords
- Electron tunneling
- Numerical simulations
- Quantum hydrodynamic model
- Semiconductor devices
ASJC Scopus subject areas
- Computational Mechanics
- Mechanics of Materials
- Mechanical Engineering
- Physics and Astronomy(all)
- Computer Science Applications