Abstract

Absorber material with high and stable p-type doping that does not impede free carrier lifetime is the key component enabling efficiency and stability improvements in thin-film CdTe technology. To better understand the compensation mechanism and the metastable effects related to Cu acceptors, the most common p-type dopant in CdTe, i.e., a detailed kinetic model describing the behavior of intrinsic and Cu-related defects in this material, has been developed and applied for the first time. Migration and reactions of these point defects in single crystal CdTe have been investigated by solving diffusion–reaction equations in the time–space domain self-consistently with free carrier transport. The simulation results supported by reasonable match to experimental data have shed light on the nature of limited Cu incorporation (also known as the Cu solubility limits) and Cu self-compensation during the annealing and cooling processes.

Original languageEnglish (US)
JournalIEEE Journal of Photovoltaics
DOIs
StateAccepted/In press - Jun 15 2016

Fingerprint

Copper
Doping (additives)
Single crystals
absorbers (materials)
copper
Carrier lifetime
Carrier transport
single crystals
Computer simulation
Point defects
carrier lifetime
point defects
solubility
simulation
Solubility
Annealing
Cooling
cooling
Thin films
Defects

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Numerical Simulation of Copper Migration in Single Crystal CdTe. / Guo, Da; Fang, Tian; Moore, Andrew; Brinkman, Daniel; Akis, Richard; Krasikov, Dmitry; Sankin, Igor; Ringhofer, Christian; Vasileska, Dragica.

In: IEEE Journal of Photovoltaics, 15.06.2016.

Research output: Contribution to journalArticle

Guo, Da ; Fang, Tian ; Moore, Andrew ; Brinkman, Daniel ; Akis, Richard ; Krasikov, Dmitry ; Sankin, Igor ; Ringhofer, Christian ; Vasileska, Dragica. / Numerical Simulation of Copper Migration in Single Crystal CdTe. In: IEEE Journal of Photovoltaics. 2016.
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