Numerical Simulation of a Steady-State Electron Shock Wave in a Submicrometer Semiconductor Device

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Abstract

The hydrodynamic model consists of a set of nonlinear conservation laws for particle number, momentum, and energy, coupled to Poisson's equation for the electric potential. The nonlinear conservation laws are just the Euler equations of gas dynamics for a gas of charged particles in an electric field, with the addition of a heat conduction term. Thus the hydrodynamic model PDE's have hyperbolic, parabolic, and elliptic modes.The nonlinear hyperbolic modes support shock waves. The first numerical simulations of a steady-state electron shock wave in a semiconductor device are presented, using the hydrodynamic model. For the ballistic diode (which models the channel of a MOSFET), the shock wave is fully developed in Si (with 1-V bias) at 300 K for a 0.1-pm channel and at 77 K for a 1.0-pm channel.

Original languageEnglish (US)
Pages (from-to)392-398
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume38
Issue number2
DOIs
StatePublished - Feb 1991

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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