Abstract

We have developed a numerical approach to calculate the confining potential and charge profiles in silicon quantum dots. We use a 3D generalization of the strongly implicit procedure for the Poisson equation. The efficient difference approximation, proposed by Scharfetter and Gummel, was extended to 3D for the continuity equation. To reduce the computation time and storage requirements, an adaptive non-uniform mesh was adopted.

Original languageEnglish (US)
Pages (from-to)343-347
Number of pages5
JournalSuperlattices and Microstructures
Volume20
Issue number3
StatePublished - Oct 1996

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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