Numerical modeling of silicon quantum dots

S. Udipi; Dragica Vasileska; D. K. Ferry

doi:10.1006/spmi.1996.0087

Numerical modeling of silicon quantum dots

S. Udipi, Dragica Vasileska, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We have developed a numerical approach to calculate the confining potential and charge profiles in silicon quantum dots. We use a 3D generalization of the strongly implicit procedure for the Poisson equation. The efficient difference approximation, proposed by Scharfetter and Gummel, was extended to 3D for the continuity equation. To reduce the computation time and storage requirements, an adaptive non-uniform mesh was adopted.

Original language	English (US)
Pages (from-to)	343-347
Number of pages	5
Journal	Superlattices and Microstructures
Volume	20
Issue number	3
DOIs	https://doi.org/10.1006/spmi.1996.0087
State	Published - Oct 1996

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1006/spmi.1996.0087

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abstract = "We have developed a numerical approach to calculate the confining potential and charge profiles in silicon quantum dots. We use a 3D generalization of the strongly implicit procedure for the Poisson equation. The efficient difference approximation, proposed by Scharfetter and Gummel, was extended to 3D for the continuity equation. To reduce the computation time and storage requirements, an adaptive non-uniform mesh was adopted.",

author = "S. Udipi and Dragica Vasileska and Ferry, {D. K.}",

note = "Funding Information: Acknowledgements—The authors would like to acknowledge the financial support of ONR and ARPA.",

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Numerical modeling of silicon quantum dots

Abstract

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