Numerical modeling of radiation effects in Si solar cell for space

Alexandre Fedoseyev, Ashok Raman, David Thomas, Stuart Bowden, Jea Young Choi, Christiana Honsberg, Tanmay Monga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Improvements to solar cell efficiency and radiation hardness that are compatible with low cost, high volume manufacturing processes are critical for power generation applications in future long-term NASA and DOD space missions. In this paper, we provide the results of numerical simulation of the radiation effects in a novel, ultra-thin (UT), Si photovoltaic cell technology that combines enhanced light trapping (LT) and absorption due to nanostructured surfaces, separation of photogenerated carriers by carrier selective contacts (CSC), and increased carrier density due to multiple exciton generation (MEG). Such solar cells have a potential to achieve high conversion efficiencies while shown to be rad-hard, lightweight, flexible, and low-cost, due to the use of Si high volume techniques.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSPIE
Volume9358
ISBN (Print)9781628414486
DOIs
StatePublished - 2015
EventPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices IV - San Francisco, United States
Duration: Feb 10 2015Feb 12 2015

Other

OtherPhysics, Simulation, and Photonic Engineering of Photovoltaic Devices IV
CountryUnited States
CitySan Francisco
Period2/10/152/12/15

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ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Fedoseyev, A., Raman, A., Thomas, D., Bowden, S., Choi, J. Y., Honsberg, C., & Monga, T. (2015). Numerical modeling of radiation effects in Si solar cell for space. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 9358). [93580N] SPIE. https://doi.org/10.1117/12.2081064