Numerical modeling of highly doped Si: P emitters based on Fermi-Dirac statistics and self-consistent material parameters

Pietro P. Altermatt, Jürgen O. Schumacher, Andres Cuevas, Mark J. Kerr, Stefan W. Glunz, Richard King, Gernot Heiser, Andreas Schenk

Research output: Contribution to journalArticle

119 Citations (Scopus)

Abstract

We have established a simulation model for phosphorus-doped silicon emitters using Fermi-Dirac statistics. Our model is based on a set of independently measured material parameters and on quantum mechanical calculations. In contrast to commonly applied models, which use Boltzmann statistics and apparent band-gap narrowing data, we use Fermi-Dirac statistics and theoretically derived band shifts, and therefore we account for the degeneracy effects on a physically sounder basis. This leads to unprecedented consistency and precision even at very high dopant densities. We also derive the hole surface recombination velocity parameter S po by applying our model to a broad range of measurements of the emitter saturation current density. Despite small differences in oxide quality among various laboratories, S po generally increases for all of them in a very similar manner at high surface doping densities N surf. Pyramidal texturing generally increases S po by a factor of five. The frequently used forming gas anneal lowers S po mainly in low-doped emitters, while an aluminum anneal (Al deposit followed by a heat cycle) lowers S po at all N surf.

Original languageEnglish (US)
Pages (from-to)3187-3197
Number of pages11
JournalJournal of Applied Physics
Volume92
Issue number6
DOIs
StatePublished - Sep 15 2002
Externally publishedYes

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Fermi-Dirac statistics
emitters
phosphorus
deposits
statistics
current density
aluminum
saturation
heat
cycles
oxides
acoustics
shift
silicon
gases
simulation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Numerical modeling of highly doped Si : P emitters based on Fermi-Dirac statistics and self-consistent material parameters. / Altermatt, Pietro P.; Schumacher, Jürgen O.; Cuevas, Andres; Kerr, Mark J.; Glunz, Stefan W.; King, Richard; Heiser, Gernot; Schenk, Andreas.

In: Journal of Applied Physics, Vol. 92, No. 6, 15.09.2002, p. 3187-3197.

Research output: Contribution to journalArticle

Altermatt, PP, Schumacher, JO, Cuevas, A, Kerr, MJ, Glunz, SW, King, R, Heiser, G & Schenk, A 2002, 'Numerical modeling of highly doped Si: P emitters based on Fermi-Dirac statistics and self-consistent material parameters', Journal of Applied Physics, vol. 92, no. 6, pp. 3187-3197. https://doi.org/10.1063/1.1501743
Altermatt, Pietro P. ; Schumacher, Jürgen O. ; Cuevas, Andres ; Kerr, Mark J. ; Glunz, Stefan W. ; King, Richard ; Heiser, Gernot ; Schenk, Andreas. / Numerical modeling of highly doped Si : P emitters based on Fermi-Dirac statistics and self-consistent material parameters. In: Journal of Applied Physics. 2002 ; Vol. 92, No. 6. pp. 3187-3197.
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