Nucleation of Ge islands on Si mesas with high-index facets

M. Goryll, L. Vescan, H. Lüth

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

In this paper, we report on the nucleation and growth behavior of nominally pure Ge islands when the deposition is being done on small pre-structured Si mesas. As these mesas with a lateral dimension ranging from 1 to 10 μm have been prepared using selective epitaxial growth, they exhibit different facets depending on the orientation of the mesa with respect to the Si substrate. As a result, Ge islands preferably nucleate on shallow-index facets as well as on (3 1 1) facets with steep edges. Contrary to this, no islanding has been observed on (9 1 1) facets. The preferential nucleation of the islands is being discussed with respect to the facet properties, i.e. the local step density and the strain anisotropy.

Original languageEnglish (US)
Pages (from-to)9-13
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume101
Issue number1-3
DOIs
StatePublished - Aug 15 2003
Externally publishedYes

Keywords

  • Ge dots
  • High-index planes
  • LPCVD
  • Self-organization
  • Si mesas

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Nucleation of Ge islands on Si mesas with high-index facets'. Together they form a unique fingerprint.

Cite this