Nuclear spin based memory and logic in quantum Hall semiconductor nanostructures for quantum computing applications

R. G. Mani, W. B. Johnson, V. Narayanamurti, V. Privman, Yong-Hang Zhang

Research output: Contribution to journalConference articlepeer-review

29 Scopus citations

Abstract

Nuclear spin based memory and logic in quantum Hall semiconductor nanostructure for quantum computing applications was discussed. A hyperfine interaction based approach for setting, measuring, and erasing nuclear polarization in quantum Hall nanostructures was developed for the realization of nuclear spin devices for quantum computing application. Results showed that quantum Hall regime with the associated vanishing longitudinal resistance improves the sensitivity of electrical resonance detection techniques that were useful for spin state readout, and also increases relaxation/coherence time.

Original languageEnglish (US)
Pages (from-to)152-156
Number of pages5
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume12
Issue number1-4
DOIs
StatePublished - Jan 1 2002
Event14th International Conference on the - Prague, Czech Republic
Duration: Jul 30 2001Aug 3 2001

Keywords

  • Logic
  • Memory
  • Nuclear spin
  • Quantum Hall effects
  • Quantum computing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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