Abstract
Nuclear spin based memory and logic in quantum Hall semiconductor nanostructure for quantum computing applications was discussed. A hyperfine interaction based approach for setting, measuring, and erasing nuclear polarization in quantum Hall nanostructures was developed for the realization of nuclear spin devices for quantum computing application. Results showed that quantum Hall regime with the associated vanishing longitudinal resistance improves the sensitivity of electrical resonance detection techniques that were useful for spin state readout, and also increases relaxation/coherence time.
Original language | English (US) |
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Pages (from-to) | 152-156 |
Number of pages | 5 |
Journal | Physica E: Low-Dimensional Systems and Nanostructures |
Volume | 12 |
Issue number | 1-4 |
DOIs | |
State | Published - Jan 1 2002 |
Event | 14th International Conference on the - Prague, Czech Republic Duration: Jul 30 2001 → Aug 3 2001 |
Keywords
- Logic
- Memory
- Nuclear spin
- Quantum Hall effects
- Quantum computing
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics