Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation

Xixiang Feng, Pengpeng Ren, Zhigang Ji, Runsheng Wang, Ketul B. Sutaria, Yu Cao, Ru Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Hot carrier injection (HCI) is one of the critical de-vice degradation mechanisms, and is conventionally characterized with constant voltage stress (CVS) method. A novel voltage-step stress (VSS) methodology is pro-posed to quickly characterize HCI degradation, based on a simplified reaction-diffusion model. This wafer-level reliability qualification methodology for HCI requires only one single device, and the total test time can be con-trolled within 2 hours. Therefore, this new technique can be an effective tool for fast reliability screening for HCI during process development in the future.

Original languageEnglish (US)
Title of host publicationProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781479932962
DOIs
Publication statusPublished - Jan 23 2014
Event2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
Duration: Oct 28 2014Oct 31 2014

Other

Other2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
CountryChina
CityGuilin
Period10/28/1410/31/14

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ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Feng, X., Ren, P., Ji, Z., Wang, R., Sutaria, K. B., Cao, Y., & Huang, R. (2014). Novel voltage step stress (VSS) technique for fast lifetime prediction of hot carrier degradation. In Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 [7021226] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021226