Novel applications for titanium dioxide (TiO2) thin films have the potential to reduce production costs of silicon (Si) solar cells, especially for structures like the buried-contact solar cell. This paper demonstrates several new uses for TiO2 films. Firstly, it is demonstrated that the TiO2 film does not contaminate the silicon wafer or furnace after lengthy high-temperature processing. Secondly, a thin silicon dioxide passivation layer can be grown at the TiO2/Si interface by performing a brief oxidation after the deposition of the TiO2. With this method, very low emitter dark saturation currents have been achieved on lightly-diffused high-resistivity float zone wafers. Thirdly, TiO2 films doped with 1% phosphorus were investigated as an emitter dopant source. Initial results have shown that light diffusions are possible. Finally, the applicability of TiO2 as a phosphorus diffusion barrier was investigated.