TY - GEN
T1 - Novel uses of TiO2 in crystalline silicon solar cells
AU - Richards, Bryce S.
AU - Cotter, Jeffrey E.
AU - Honsberg, Christiana B.
AU - Wenham, Stuart R.
PY - 2000/1/1
Y1 - 2000/1/1
N2 - Novel applications for titanium dioxide (TiO2) thin films have the potential to reduce production costs of silicon (Si) solar cells, especially for structures like the buried-contact solar cell. This paper demonstrates several new uses for TiO2 films. Firstly, it is demonstrated that the TiO2 film does not contaminate the silicon wafer or furnace after lengthy high-temperature processing. Secondly, a thin silicon dioxide passivation layer can be grown at the TiO2/Si interface by performing a brief oxidation after the deposition of the TiO2. With this method, very low emitter dark saturation currents have been achieved on lightly-diffused high-resistivity float zone wafers. Thirdly, TiO2 films doped with 1% phosphorus were investigated as an emitter dopant source. Initial results have shown that light diffusions are possible. Finally, the applicability of TiO2 as a phosphorus diffusion barrier was investigated.
AB - Novel applications for titanium dioxide (TiO2) thin films have the potential to reduce production costs of silicon (Si) solar cells, especially for structures like the buried-contact solar cell. This paper demonstrates several new uses for TiO2 films. Firstly, it is demonstrated that the TiO2 film does not contaminate the silicon wafer or furnace after lengthy high-temperature processing. Secondly, a thin silicon dioxide passivation layer can be grown at the TiO2/Si interface by performing a brief oxidation after the deposition of the TiO2. With this method, very low emitter dark saturation currents have been achieved on lightly-diffused high-resistivity float zone wafers. Thirdly, TiO2 films doped with 1% phosphorus were investigated as an emitter dopant source. Initial results have shown that light diffusions are possible. Finally, the applicability of TiO2 as a phosphorus diffusion barrier was investigated.
UR - http://www.scopus.com/inward/record.url?scp=84876608741&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84876608741&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2000.915844
DO - 10.1109/PVSC.2000.915844
M3 - Conference contribution
AN - SCOPUS:84876608741
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 375
EP - 378
BT - Conference Record of the 28th IEEE Photovoltaic Specialists Conference - 2000
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 28th IEEE Photovoltaic Specialists Conference, PVSC 2000
Y2 - 15 September 2000 through 22 September 2000
ER -