Novel transport simulation of vertically-grown MOSFETs by cellular automaton method

A. Rein, G. Zandler, Marco Saraniti, P. Lugli, P. Vogl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

We present a theoretical study of vertically-grown Silicon ultra-short FET's. For a gate length of 50 nm a transconductance of at least 1000 mS/mm and a maximum transit time frequency of 200 GHz are predicted. A sensitive influence of the doping profile on short channel effects is demonstrated. Our simulations are based on a new implementation of the Cellular Automata method, which provides a significant suppression of statistical errors. To take advantage of the high speed of the Cellular Automaton a fast multigrid-solver for the Poisson equation has been developed.

Original languageEnglish (US)
Title of host publicationTechnical Digest - International Electron Devices Meeting
PublisherIEEE
Pages351-354
Number of pages4
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: Dec 11 1994Dec 14 1994

Other

OtherProceedings of the 1994 IEEE International Electron Devices Meeting
CitySan Francisco, CA, USA
Period12/11/9412/14/94

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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