Abstract
We present a theoretical study of vertically-grown Silicon ultra-short FET's. For a gate length of 50 nm a transconductance of at least 1000 mS/mm and a maximum transit time frequency of 200 GHz are predicted. A sensitive influence of the doping profile on short channel effects is demonstrated. Our simulations are based on a new implementation of the Cellular Automata method, which provides a significant suppression of statistical errors. To take advantage of the high speed of the Cellular Automaton a fast multigrid-solver for the Poisson equation has been developed.
| Original language | English (US) |
|---|---|
| Title of host publication | Technical Digest - International Electron Devices Meeting |
| Publisher | IEEE |
| Pages | 351-354 |
| Number of pages | 4 |
| State | Published - 1994 |
| Externally published | Yes |
| Event | Proceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 11 1994 → Dec 14 1994 |
Other
| Other | Proceedings of the 1994 IEEE International Electron Devices Meeting |
|---|---|
| City | San Francisco, CA, USA |
| Period | 12/11/94 → 12/14/94 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering