A novel technique to pattern Ag thin films using CF4 and CF4/O2 glow discharges at low temperatures followed by a resist strip process is proposed. Ag reacts with the reactive species from glow discharge to form byproducts which are simultaneously sputtered and desorped during plasma exposure. The reacted Ag films are dissolved in a warm microstrip solvent for film removal. The effects of process conditions on etch rate and post-etch surface roughness are studied.
|Original language||English (US)|
|Number of pages||8|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Jan 1 2001|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering