Novel system for X-ray CTR scattering measurement on in-situ observation of OMVPE growth of nitride semiconductor heterostructures

Koji Ninoi, Guang Xu Ju, Hajime Kamiya, Shingo Fuchi, Masao Tabuchi, Yoshikazu Takeda

Research output: Contribution to journalArticle

5 Scopus citations


A novel system for in-situ X-ray CTR scattering measurement on in-situ observation of group-III nitride semiconductor growth was constructed by setting an OMVPE reactor at the sample position of the X-ray diffractometer which was developed for in-situ measurement of growing semiconductor crystals. For in-situ observation of the growth of semiconductor, firstly, it is necessary to investigate the capabilities of the new system. In this work, after the safety check of the OMVPE reactor with thin Be windows, the capability of the new system as an X-ray diffractometer and a growth reactor of group-III nitride semiconductors was tested. After the GaInN layer was deposited successfully, the X-ray CTR scattering measurement was conducted at the growth temperature. The different CTR spectra measured at the growth temperature and at room-temperature after the growth were obtained. It indicates that the status of the crystal at growth conditions can be analyzed by using the new system. Therefore, the new system can be developed for in-situ observation of the OMVPE growth of the group-III nitride semiconductors.

Original languageEnglish (US)
Pages (from-to)1139-1142
Number of pages4
JournalJournal of Crystal Growth
Issue number1
StatePublished - Mar 1 2011



  • A1. Crystal structure
  • A1. High resolution X-ray diffraction
  • A1. In-situ observation
  • A3. Organometallic vapor phase epitaxy
  • B2. Semiconducting IIIV materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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