Abstract
New unimolecular carbon-nitride precursors such as C3N3F2N(SiMe3)2 and C3N3Cl2N(SiMe3)2 were synthesized and used to deposit thin films of composition C3N4-C3.2N4, the highest nitrogen content observed in C-N solids. The films were formed by the thermal decomposition of the precursors via elimination of SiMe3F and SiMe3Cl at 400-500°C. Film thicknesses between 1200 and 4000 Å were deposited on (100) Si, graphite, beryllium, and SiO2, and were extensively characterized for composition and chemical purity using RBS, energy-dispersive X-ray analysis, and SIMS. The material was amorphous as indicated by X-ray diffraction. IR, EELS, and 13C NMR reveal substantial sp2 hybridization in both the carbon and the nitrogen. This material should be an excellent precursor for the high-pressure synthesis of C3N4, the highly sought structural and compositional analog of Si3N4.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 811-814 |
| Number of pages | 4 |
| Journal | Chemistry of Materials |
| Volume | 6 |
| Issue number | 6 |
| State | Published - 1994 |
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ASJC Scopus subject areas
- Materials Chemistry
- Materials Science(all)
Cite this
Novel synthetic routes to carbon-nitrogen thin films. / Kouvetakis, John; Bandari, Anil; Todd, Michael; Wilkens, Barry; Cave, Nigel.
In: Chemistry of Materials, Vol. 6, No. 6, 1994, p. 811-814.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Novel synthetic routes to carbon-nitrogen thin films
AU - Kouvetakis, John
AU - Bandari, Anil
AU - Todd, Michael
AU - Wilkens, Barry
AU - Cave, Nigel
PY - 1994
Y1 - 1994
N2 - New unimolecular carbon-nitride precursors such as C3N3F2N(SiMe3)2 and C3N3Cl2N(SiMe3)2 were synthesized and used to deposit thin films of composition C3N4-C3.2N4, the highest nitrogen content observed in C-N solids. The films were formed by the thermal decomposition of the precursors via elimination of SiMe3F and SiMe3Cl at 400-500°C. Film thicknesses between 1200 and 4000 Å were deposited on (100) Si, graphite, beryllium, and SiO2, and were extensively characterized for composition and chemical purity using RBS, energy-dispersive X-ray analysis, and SIMS. The material was amorphous as indicated by X-ray diffraction. IR, EELS, and 13C NMR reveal substantial sp2 hybridization in both the carbon and the nitrogen. This material should be an excellent precursor for the high-pressure synthesis of C3N4, the highly sought structural and compositional analog of Si3N4.
AB - New unimolecular carbon-nitride precursors such as C3N3F2N(SiMe3)2 and C3N3Cl2N(SiMe3)2 were synthesized and used to deposit thin films of composition C3N4-C3.2N4, the highest nitrogen content observed in C-N solids. The films were formed by the thermal decomposition of the precursors via elimination of SiMe3F and SiMe3Cl at 400-500°C. Film thicknesses between 1200 and 4000 Å were deposited on (100) Si, graphite, beryllium, and SiO2, and were extensively characterized for composition and chemical purity using RBS, energy-dispersive X-ray analysis, and SIMS. The material was amorphous as indicated by X-ray diffraction. IR, EELS, and 13C NMR reveal substantial sp2 hybridization in both the carbon and the nitrogen. This material should be an excellent precursor for the high-pressure synthesis of C3N4, the highly sought structural and compositional analog of Si3N4.
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M3 - Article
AN - SCOPUS:33751158752
VL - 6
SP - 811
EP - 814
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 6
ER -