Novel Synthetic Routes to Carbon-Nitrogen Thin Films

John Kouvetakis; Anil Bandari; Michael Todd; Barry Wilkens; Nigel Cave

doi:10.1021/cm00042a018

Novel Synthetic Routes to Carbon-Nitrogen Thin Films

John Kouvetakis, Anil Bandari, Michael Todd, Barry Wilkens, Nigel Cave

CLAS-NS: Molecular Sciences, School of (SMS)

Research output: Contribution to journal › Article › peer-review

217 Scopus citations

Abstract

New unimolecular carbon-nitride precursors such as C₃N₃F₂N(SiMe₃)₂ and C₃N₃Cl₂N(SiMe₃)₂ were synthesized and used to deposit thin films of composition C₃N₄-C_3.2N₄, the highest nitrogen content observed in C-N solids. The films were formed by the thermal decomposition of the precursors via elimination of SiMe₃F and SiMe₃Cl at 400–500 °C. Film thicknesses between 1200 and 4000 Å were deposited on (100) Si, graphite, beryllium, and SiO₂, and were extensively characterized for composition and chemical purity using RBS, energy-dispersive X-ray analysis, and SIMS. The material was amorphous as indicated by X-ray diffraction. IR, EELS, and ¹³C NMR reveal substantial sp² hybridization in both the carbon and the nitrogen. This material should be an excellent precursor for the high-pressure synthesis of C₃N₄, the highly sought structural and compositional analog of Si₃N₄.

Original language	English (US)
Pages (from-to)	811-814
Number of pages	4
Journal	Chemistry of Materials
Volume	6
Issue number	6
DOIs	https://doi.org/10.1021/cm00042a018
State	Published - Jun 1 1994

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

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title = "Novel Synthetic Routes to Carbon-Nitrogen Thin Films",

abstract = "New unimolecular carbon-nitride precursors such as C3N3F2N(SiMe3)2 and C3N3Cl2N(SiMe3)2 were synthesized and used to deposit thin films of composition C3N4-C3.2N4, the highest nitrogen content observed in C-N solids. The films were formed by the thermal decomposition of the precursors via elimination of SiMe3F and SiMe3Cl at 400–500 °C. Film thicknesses between 1200 and 4000 {\AA} were deposited on (100) Si, graphite, beryllium, and SiO2, and were extensively characterized for composition and chemical purity using RBS, energy-dispersive X-ray analysis, and SIMS. The material was amorphous as indicated by X-ray diffraction. IR, EELS, and 13C NMR reveal substantial sp2 hybridization in both the carbon and the nitrogen. This material should be an excellent precursor for the high-pressure synthesis of C3N4, the highly sought structural and compositional analog of Si3N4.",

author = "John Kouvetakis and Anil Bandari and Michael Todd and Barry Wilkens and Nigel Cave",

year = "1994",

month = jun,

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doi = "10.1021/cm00042a018",

language = "English (US)",

volume = "6",

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journal = "Chemistry of Materials",

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publisher = "American Chemical Society",

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TY - JOUR

T1 - Novel Synthetic Routes to Carbon-Nitrogen Thin Films

AU - Kouvetakis, John

AU - Bandari, Anil

AU - Todd, Michael

AU - Wilkens, Barry

AU - Cave, Nigel

PY - 1994/6/1

Y1 - 1994/6/1

N2 - New unimolecular carbon-nitride precursors such as C3N3F2N(SiMe3)2 and C3N3Cl2N(SiMe3)2 were synthesized and used to deposit thin films of composition C3N4-C3.2N4, the highest nitrogen content observed in C-N solids. The films were formed by the thermal decomposition of the precursors via elimination of SiMe3F and SiMe3Cl at 400–500 °C. Film thicknesses between 1200 and 4000 Å were deposited on (100) Si, graphite, beryllium, and SiO2, and were extensively characterized for composition and chemical purity using RBS, energy-dispersive X-ray analysis, and SIMS. The material was amorphous as indicated by X-ray diffraction. IR, EELS, and 13C NMR reveal substantial sp2 hybridization in both the carbon and the nitrogen. This material should be an excellent precursor for the high-pressure synthesis of C3N4, the highly sought structural and compositional analog of Si3N4.

AB - New unimolecular carbon-nitride precursors such as C3N3F2N(SiMe3)2 and C3N3Cl2N(SiMe3)2 were synthesized and used to deposit thin films of composition C3N4-C3.2N4, the highest nitrogen content observed in C-N solids. The films were formed by the thermal decomposition of the precursors via elimination of SiMe3F and SiMe3Cl at 400–500 °C. Film thicknesses between 1200 and 4000 Å were deposited on (100) Si, graphite, beryllium, and SiO2, and were extensively characterized for composition and chemical purity using RBS, energy-dispersive X-ray analysis, and SIMS. The material was amorphous as indicated by X-ray diffraction. IR, EELS, and 13C NMR reveal substantial sp2 hybridization in both the carbon and the nitrogen. This material should be an excellent precursor for the high-pressure synthesis of C3N4, the highly sought structural and compositional analog of Si3N4.

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DO - 10.1021/cm00042a018

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SN - 0897-4756

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ER -

Novel Synthetic Routes to Carbon-Nitrogen Thin Films

Abstract

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