Novel nanoscale resist using 10-undecanoic acid monolayers on silicon dioxide

Michael Kozicki, S. J. Yang, T. Kim, B. Kardynal

Research output: Contribution to journalConference article

Abstract

In this paper, we discuss the use of 10-undecanoic acid monolayers on silicon dioxide films in a novel electron beam patterning process. The monolayers are locally fixed by electron exposure and subsequently act as an oxide etch initiator in HF vapor, thereby allowing the oxide to be patterned. We present the effects of various post-exposure solvent treatments on etch rate enhancement and selectivity. The influence of electron beam dose on the etching of thermal and deposited SiO2 is also shown.

Original languageEnglish (US)
Pages (from-to)239-241
Number of pages3
JournalMicroelectronic Engineering
Volume47
Issue number1
DOIs
StatePublished - Jun 1999
EventProceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) - Kauai, HI, USA
Duration: Dec 7 1998Dec 11 1998

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this