Novel materials and integration schemes for CMOS-based circuits for flexible electronics

M. A. Quevedo-Lopez, S. Gowrisanker, David Allee, S. Venugopal, R. Krishna, K. Kaftanoglu, H. N. Alshareef, B. E. Gnade

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The development of low temperature, thin film transistor processes that has enabled flexible displays also presents opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible, low metal content, sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, neutron/gamma-ray/x-ray detectors, etc. In this paper, we review the state-of-the-art in flexible electronics materials and devices and present recent results in our efforts to fully integrate complementary metal oxide semiconductors. We conclude with a discussion of the constraints of thin film transistors and the remaining challenges.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages503-511
Number of pages9
Volume25
Edition7
DOIs
StatePublished - 2009
EventULSI Process Integration 6 - 216th Meeting of the Electrochemical Society - Vienna, Austria
Duration: Oct 4 2009Oct 9 2009

Other

OtherULSI Process Integration 6 - 216th Meeting of the Electrochemical Society
CountryAustria
CityVienna
Period10/4/0910/9/09

Fingerprint

Flexible electronics
Thin film transistors
Flexible displays
Electronic medical equipment
Smart sensors
Networks (circuits)
Metals
Gamma rays
Neutrons
Antennas
Detectors
X rays
Sensors
Temperature
Oxide semiconductors

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Quevedo-Lopez, M. A., Gowrisanker, S., Allee, D., Venugopal, S., Krishna, R., Kaftanoglu, K., ... Gnade, B. E. (2009). Novel materials and integration schemes for CMOS-based circuits for flexible electronics. In ECS Transactions (7 ed., Vol. 25, pp. 503-511) https://doi.org/10.1149/1.3203989

Novel materials and integration schemes for CMOS-based circuits for flexible electronics. / Quevedo-Lopez, M. A.; Gowrisanker, S.; Allee, David; Venugopal, S.; Krishna, R.; Kaftanoglu, K.; Alshareef, H. N.; Gnade, B. E.

ECS Transactions. Vol. 25 7. ed. 2009. p. 503-511.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Quevedo-Lopez, MA, Gowrisanker, S, Allee, D, Venugopal, S, Krishna, R, Kaftanoglu, K, Alshareef, HN & Gnade, BE 2009, Novel materials and integration schemes for CMOS-based circuits for flexible electronics. in ECS Transactions. 7 edn, vol. 25, pp. 503-511, ULSI Process Integration 6 - 216th Meeting of the Electrochemical Society, Vienna, Austria, 10/4/09. https://doi.org/10.1149/1.3203989
Quevedo-Lopez MA, Gowrisanker S, Allee D, Venugopal S, Krishna R, Kaftanoglu K et al. Novel materials and integration schemes for CMOS-based circuits for flexible electronics. In ECS Transactions. 7 ed. Vol. 25. 2009. p. 503-511 https://doi.org/10.1149/1.3203989
Quevedo-Lopez, M. A. ; Gowrisanker, S. ; Allee, David ; Venugopal, S. ; Krishna, R. ; Kaftanoglu, K. ; Alshareef, H. N. ; Gnade, B. E. / Novel materials and integration schemes for CMOS-based circuits for flexible electronics. ECS Transactions. Vol. 25 7. ed. 2009. pp. 503-511
@inproceedings{d34d1d30c9514585b849c592f1f96096,
title = "Novel materials and integration schemes for CMOS-based circuits for flexible electronics",
abstract = "The development of low temperature, thin film transistor processes that has enabled flexible displays also presents opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible, low metal content, sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, neutron/gamma-ray/x-ray detectors, etc. In this paper, we review the state-of-the-art in flexible electronics materials and devices and present recent results in our efforts to fully integrate complementary metal oxide semiconductors. We conclude with a discussion of the constraints of thin film transistors and the remaining challenges.",
author = "Quevedo-Lopez, {M. A.} and S. Gowrisanker and David Allee and S. Venugopal and R. Krishna and K. Kaftanoglu and Alshareef, {H. N.} and Gnade, {B. E.}",
year = "2009",
doi = "10.1149/1.3203989",
language = "English (US)",
isbn = "9781566777445",
volume = "25",
pages = "503--511",
booktitle = "ECS Transactions",
edition = "7",

}

TY - GEN

T1 - Novel materials and integration schemes for CMOS-based circuits for flexible electronics

AU - Quevedo-Lopez, M. A.

AU - Gowrisanker, S.

AU - Allee, David

AU - Venugopal, S.

AU - Krishna, R.

AU - Kaftanoglu, K.

AU - Alshareef, H. N.

AU - Gnade, B. E.

PY - 2009

Y1 - 2009

N2 - The development of low temperature, thin film transistor processes that has enabled flexible displays also presents opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible, low metal content, sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, neutron/gamma-ray/x-ray detectors, etc. In this paper, we review the state-of-the-art in flexible electronics materials and devices and present recent results in our efforts to fully integrate complementary metal oxide semiconductors. We conclude with a discussion of the constraints of thin film transistors and the remaining challenges.

AB - The development of low temperature, thin film transistor processes that has enabled flexible displays also presents opportunities for flexible electronics and flexible integrated systems. Of particular interest are possible applications in flexible, low metal content, sensor systems for unattended ground sensors, smart medical bandages, electronic ID tags for geo-location, conformal antennas, neutron/gamma-ray/x-ray detectors, etc. In this paper, we review the state-of-the-art in flexible electronics materials and devices and present recent results in our efforts to fully integrate complementary metal oxide semiconductors. We conclude with a discussion of the constraints of thin film transistors and the remaining challenges.

UR - http://www.scopus.com/inward/record.url?scp=74349097098&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=74349097098&partnerID=8YFLogxK

U2 - 10.1149/1.3203989

DO - 10.1149/1.3203989

M3 - Conference contribution

AN - SCOPUS:74349097098

SN - 9781566777445

VL - 25

SP - 503

EP - 511

BT - ECS Transactions

ER -