Novel full-band monte carlo device simulator with real-space treatment of the short-range coulomb interactions for modeling 4H-SiC power devices

Chi Yin Cheng, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we present a novel full-band Monte Carlo device simulator for modelling 4H-SiC Power electronic devices in which, for the first time, we use real-space molecular dynamics approach for the Coulomb interactions. Proper treatment of the electron-electron interactions is critical for modelling power electronic devices because of the high electron densities. In addition, because of the high applied voltages, the use of a full-band Monte Carlo device simulator is a must. The simulator has been successfully used to explain the steady-state behavior of a 3-D vertical double-diffused MOSFET (VDMOS) fabricated in the 4H-SiC technology.

Original languageEnglish (US)
Title of host publication2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages149-152
Number of pages4
ISBN (Electronic)9784863487635
DOIs
StatePublished - Sep 23 2020
Event2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 - Virtual, Kobe, Japan
Duration: Sep 3 2020Oct 6 2020

Publication series

NameInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Volume2020-September

Conference

Conference2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
CountryJapan
CityVirtual, Kobe
Period9/3/2010/6/20

Keywords

  • 4H-SiC
  • Full-band device simulator
  • Monte Carlo Method
  • Real-space treatment of Coulomb interactions
  • Vertical double-diffused MOSFET (VDMOS)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modeling and Simulation

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