Abstract
The use of novel molecular precursors and ultrahigh vacuum chemical vapor deposition (UHV/CVD) techniques to synthesize solid solutions of cubic SiC-GeC and diamond-structured Si1-x-yGexCy materials. Thin films with composition Sio.37Geo.13Co.5o were deposited on Si by thermal decomposition of Ge[Si(CH3)3]4 at 650-700oC. Transmission electron microscopy (TEM) observations showed a polycrystalline zincblende type-structure and infrared (IR) analyses revealed carbide-type Si-Cd and Ge-C vibrations.
| Original language | English (US) |
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| State | Published - Jan 1 1900 |