NOVEL CHEMICAL ROUTE TO SiGeC MATERIALS

John Kouvetakis (Inventor)

Research output: Patent

Abstract

The use of novel molecular precursors and ultrahigh vacuum chemical vapor deposition (UHV/CVD) techniques to synthesize solid solutions of cubic SiC-GeC and diamond-structured Si1-x-yGexCy materials. Thin films with composition Sio.37Geo.13Co.5o were deposited on Si by thermal decomposition of Ge[Si(CH3)3]4 at 650-700oC. Transmission electron microscopy (TEM) observations showed a polycrystalline zincblende type-structure and infrared (IR) analyses revealed carbide-type Si-Cd and Ge-C vibrations.
Original languageEnglish (US)
StatePublished - Jan 1 1900

    Fingerprint

Cite this