A new method for employing electron-electron (e-e) and electron-ion (e-i) interactions in Monte Carlo particle based simulators is presented. By using a corrected Coulomb force in conjunction with a proper cutoff range, the `double' counting of the long range interaction is eliminated while reducing the simulation time for molecular dynamics by a factor of 1000. The proposed method naturally incorporates the multi-ion contributions, local distortions in the scattering potential due to the movement of the free charges, and carrier-density fluctuations. The doping dependence of the low-field mobility obtained from three-dimensional (3-D) resistor simulations closely follows experimental results, thus proving the correctness of the proposed approach.
|Original language||English (US)|
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|State||Published - Sep 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering