Novel approach for introducing the electron-electron and electron-impurity interactions in particle-based simulations

W. J. Gross, Dragica Vasileska, D. K. Ferry

Research output: Contribution to journalArticle

104 Citations (Scopus)

Abstract

A new method for employing electron-electron (e-e) and electron-ion (e-i) interactions in Monte Carlo particle based simulators is presented. By using a corrected Coulomb force in conjunction with a proper cutoff range, the `double' counting of the long range interaction is eliminated while reducing the simulation time for molecular dynamics by a factor of 1000. The proposed method naturally incorporates the multi-ion contributions, local distortions in the scattering potential due to the movement of the free charges, and carrier-density fluctuations. The doping dependence of the low-field mobility obtained from three-dimensional (3-D) resistor simulations closely follows experimental results, thus proving the correctness of the proposed approach.

Original languageEnglish (US)
Pages (from-to)463-465
Number of pages3
JournalIEEE Electron Device Letters
Volume20
Issue number9
DOIs
StatePublished - Sep 1999

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Impurities
Electrons
Ions
Charge density
Resistors
Carrier concentration
Molecular dynamics
Simulators
Doping (additives)
Scattering

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Novel approach for introducing the electron-electron and electron-impurity interactions in particle-based simulations. / Gross, W. J.; Vasileska, Dragica; Ferry, D. K.

In: IEEE Electron Device Letters, Vol. 20, No. 9, 09.1999, p. 463-465.

Research output: Contribution to journalArticle

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