Normal incidence infrared photodetectors using intersubband transitions in GaSb L-valley quantum wells

Y. Zhang, N. Baruch, W. I. Wang

Research output: Contribution to journalArticle

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Abstract

We report on the demonstration of normal incidence (IR) detectors based on interconduction subband transitions in narrow GaSb/Ga0.6Al 0.4Sb0.9As0.1 multiquantum wells in which L valley is the ground state. Strong IR absorption at 7.8 μm with an absorption coefficient of 9100 cm-1 and good photodetector response covering a wide spectrum region have been achieved. The orientation dependence of the absorption is also presented. Our results indicate the potential of this novel structure for use as normal incidence IR photodetectors.

Original languageEnglish (US)
Pages (from-to)1068-1070
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number8
DOIs
StatePublished - Dec 1 1993
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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