Normal incidence infrared photodetectors using intersubband transitions in GaSb L-valley quantum wells

Y. Zhang; N. Baruch; W. I. Wang

doi:10.1063/1.109835

Normal incidence infrared photodetectors using intersubband transitions in GaSb L-valley quantum wells

Y. Zhang, N. Baruch, W. I. Wang

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

We report on the demonstration of normal incidence (IR) detectors based on interconduction subband transitions in narrow GaSb/Ga_0.6Al _0.4Sb_0.9As_0.1 multiquantum wells in which L valley is the ground state. Strong IR absorption at 7.8 μm with an absorption coefficient of 9100 cm^-1 and good photodetector response covering a wide spectrum region have been achieved. The orientation dependence of the absorption is also presented. Our results indicate the potential of this novel structure for use as normal incidence IR photodetectors.

Original language	English (US)
Pages (from-to)	1068-1070
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	8
DOIs	https://doi.org/10.1063/1.109835
State	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.109835

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abstract = "We report on the demonstration of normal incidence (IR) detectors based on interconduction subband transitions in narrow GaSb/Ga0.6Al 0.4Sb0.9As0.1 multiquantum wells in which L valley is the ground state. Strong IR absorption at 7.8 μm with an absorption coefficient of 9100 cm-1 and good photodetector response covering a wide spectrum region have been achieved. The orientation dependence of the absorption is also presented. Our results indicate the potential of this novel structure for use as normal incidence IR photodetectors.",

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AU - Zhang, Y.

AU - Baruch, N.

AU - Wang, W. I.

PY - 1993

Y1 - 1993

N2 - We report on the demonstration of normal incidence (IR) detectors based on interconduction subband transitions in narrow GaSb/Ga0.6Al 0.4Sb0.9As0.1 multiquantum wells in which L valley is the ground state. Strong IR absorption at 7.8 μm with an absorption coefficient of 9100 cm-1 and good photodetector response covering a wide spectrum region have been achieved. The orientation dependence of the absorption is also presented. Our results indicate the potential of this novel structure for use as normal incidence IR photodetectors.

AB - We report on the demonstration of normal incidence (IR) detectors based on interconduction subband transitions in narrow GaSb/Ga0.6Al 0.4Sb0.9As0.1 multiquantum wells in which L valley is the ground state. Strong IR absorption at 7.8 μm with an absorption coefficient of 9100 cm-1 and good photodetector response covering a wide spectrum region have been achieved. The orientation dependence of the absorption is also presented. Our results indicate the potential of this novel structure for use as normal incidence IR photodetectors.

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JF - Applied Physics Letters

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Normal incidence infrared photodetectors using intersubband transitions in GaSb L-valley quantum wells

Abstract

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