Nonvolatile resistance switching on two-dimensional electron gas

Jin Gwan Joung; Shin Ik Kim; Seon Young Moon; Dai Hong Kim; Hyo Jin Gwon; Seong Hyeon Hong; Hye Jung Chang; Jin Ha Hwang; Beom Jin Kwon; Seong Keun Kim; Ji Won Choi; Seok Jin Yoon; Chong Yun Kang; Kwang Soo Yoo; Jin Sang Kim; Seung Hyub Baek

doi:10.1021/am504354c

Nonvolatile resistance switching on two-dimensional electron gas

Jin Gwan Joung, Shin Ik Kim, Seon Young Moon, Dai Hong Kim, Hyo Jin Gwon, Seong Hyeon Hong, Hye Jung Chang, Jin Ha Hwang, Beom Jin Kwon, Seong Keun Kim, Ji Won Choi, Seok Jin Yoon, Chong Yun Kang, Kwang Soo Yoo, Jin Sang Kim, Seung Hyub Baek

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta₂O_5-y/Ta₂O_5-x/SrTiO₃ heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>10⁶) and a low leakage current at the OFF state (∼10^-13 A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures.

Original language	English (US)
Pages (from-to)	17785-17791
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	6
Issue number	20
DOIs	https://doi.org/10.1021/am504354c
State	Published - Oct 22 2014
Externally published	Yes

Keywords

complex oxide
heterointerface
nonvolatile memory
resistance switching
two-dimensional electron gas

ASJC Scopus subject areas

General Materials Science

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10.1021/am504354c

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Joung, J. G., Kim, S. I., Moon, S. Y., Kim, D. H., Gwon, H. J., Hong, S. H., Chang, H. J., Hwang, J. H., Kwon, B. J., Kim, S. K., Choi, J. W., Yoon, S. J., Kang, C. Y., Yoo, K. S., Kim, J. S., & Baek, S. H. (2014). Nonvolatile resistance switching on two-dimensional electron gas. ACS Applied Materials and Interfaces, 6(20), 17785-17791. https://doi.org/10.1021/am504354c

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abstract = "Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta2O5-y/Ta2O5-x/SrTiO3 heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>106) and a low leakage current at the OFF state (∼10-13 A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures.",

keywords = "complex oxide, heterointerface, nonvolatile memory, resistance switching, two-dimensional electron gas",

author = "Joung, {Jin Gwan} and Kim, {Shin Ik} and Moon, {Seon Young} and Kim, {Dai Hong} and Gwon, {Hyo Jin} and Hong, {Seong Hyeon} and Chang, {Hye Jung} and Hwang, {Jin Ha} and Kwon, {Beom Jin} and Kim, {Seong Keun} and Choi, {Ji Won} and Yoon, {Seok Jin} and Kang, {Chong Yun} and Yoo, {Kwang Soo} and Kim, {Jin Sang} and Baek, {Seung Hyub}",

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doi = "10.1021/am504354c",

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AU - Joung, Jin Gwan

AU - Kim, Shin Ik

AU - Moon, Seon Young

AU - Kim, Dai Hong

AU - Gwon, Hyo Jin

AU - Hong, Seong Hyeon

AU - Chang, Hye Jung

AU - Hwang, Jin Ha

AU - Kwon, Beom Jin

AU - Kim, Seong Keun

AU - Choi, Ji Won

AU - Yoon, Seok Jin

AU - Kang, Chong Yun

AU - Yoo, Kwang Soo

AU - Kim, Jin Sang

AU - Baek, Seung Hyub

PY - 2014/10/22

Y1 - 2014/10/22

N2 - Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta2O5-y/Ta2O5-x/SrTiO3 heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>106) and a low leakage current at the OFF state (∼10-13 A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures.

AB - Two-dimensional electron gas (2DEG) at the complex oxide interfaces have brought about considerable interest for the application of the next-generation multifunctional oxide electronics due to the exotic properties that do not exist in the bulk. In this study, we report the integration of 2DEG into the nonvolatile resistance switching cell as a bottom electrode, where the metal-insulator transition of 2DEG by an external field serves to significantly reduce the OFF-state leakage current while enhancing the on/off ratio. Using the Pt/Ta2O5-y/Ta2O5-x/SrTiO3 heterostructure as a model system, we demonstrate the nonvolatile resistance switching memory cell with a large on/off ratio (>106) and a low leakage current at the OFF state (∼10-13 A). Beyond exploring nonvolatile memory, our work also provides an excellent framework for exploring the fundamental understanding of novel physics in which electronic and ionic processes are coupled in the complex heterostructures.

KW - complex oxide

KW - heterointerface

KW - nonvolatile memory

KW - resistance switching

KW - two-dimensional electron gas

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Nonvolatile resistance switching on two-dimensional electron gas

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Keywords

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