Nonvolatile memory based architectures using magnetoelectric FETs

Shaahin Angizi, Deliang Fan, Andrew Marshall, Peter A. Dowben

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Of the numerous beyond complementary metal-oxide semiconductor (CMOS) devices investigated, the magnetoelectric field effect transistor (MEFET) has shown promise as a high-speed and low-power device in both logic and memory applications. We here discuss several memory bit-cell and array design options that utilize the nonvolatile features of the MEFET. With correct codesign of the device, cell, array levels, and sense FET, such designs are promising candidates for on-chip non-volatile RAM substitution.

Original languageEnglish (US)
Title of host publicationAdvances in Semiconductor Technologies
Subtitle of host publicationSelected Topics Beyond Conventional CMOS
PublisherWiley-Blackwell
Pages79-92
Number of pages14
ISBN (Electronic)9781119869610
ISBN (Print)9781119869603
StatePublished - Sep 30 2022

Keywords

  • Benchmarking
  • Beyond CMOS
  • Magnetoelectric
  • Memory

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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