Nonuniform strain profiles in cubic CdS/GaAs films measured by reflection high energy electron diffraction and Raman spectroscopy

Kislay Sinha; Jose Menendez; David W. Niles; Hartmut Höchst

doi:10.1116/1.585765

Nonuniform strain profiles in cubic CdS/GaAs films measured by reflection high energy electron diffraction and Raman spectroscopy

Kislay Sinha, Jose Menendez, David W. Niles, Hartmut Höchst

Physics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report a study of the strain relaxation in zinc-blende CdS films grown on GaAs by molecular beam epitaxy. We use Raman spectroscopy to determine the depth dependence of the strain profile. This dependence is compared with the instantaneous surface strain relaxation measured by reflection high energy electron diffraction during growth. The Raman results show that the strain profile determined by RHEED remains largely "frozen" in the final sample. It is only near the heterostructure interface, where the strain is large, that evidence of additional relaxation is found in the Raman spectrum.

Original language	English (US)
Pages (from-to)	2202-2205
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	9
Issue number	4
DOIs	https://doi.org/10.1116/1.585765
State	Published - Jul 1 1991

Keywords

Cadmium sulfides, films, gallium arsenides, substrates, molecular beam epitaxy, strains, relaxation, raman spectra, rheed, sphalerite, interface phenomena, cds, gaas

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.585765

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Nonuniform strain profiles in cubic CdS/GaAs films measured by reflection high energy electron diffraction and Raman spectroscopy. / Sinha, Kislay; Menendez, Jose; Niles, David W. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 9, No. 4, 01.07.1991, p. 2202-2205.

Research output: Contribution to journal › Article › peer-review

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AU - Höchst, Hartmut

PY - 1991/7/1

Y1 - 1991/7/1

N2 - We report a study of the strain relaxation in zinc-blende CdS films grown on GaAs by molecular beam epitaxy. We use Raman spectroscopy to determine the depth dependence of the strain profile. This dependence is compared with the instantaneous surface strain relaxation measured by reflection high energy electron diffraction during growth. The Raman results show that the strain profile determined by RHEED remains largely "frozen" in the final sample. It is only near the heterostructure interface, where the strain is large, that evidence of additional relaxation is found in the Raman spectrum.

AB - We report a study of the strain relaxation in zinc-blende CdS films grown on GaAs by molecular beam epitaxy. We use Raman spectroscopy to determine the depth dependence of the strain profile. This dependence is compared with the instantaneous surface strain relaxation measured by reflection high energy electron diffraction during growth. The Raman results show that the strain profile determined by RHEED remains largely "frozen" in the final sample. It is only near the heterostructure interface, where the strain is large, that evidence of additional relaxation is found in the Raman spectrum.

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Nonuniform strain profiles in cubic CdS/GaAs films measured by reflection high energy electron diffraction and Raman spectroscopy

Abstract

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