Nonuniform strain gradients in CdS/GaAs films measured by reflection high-energy electron diffraction and Raman spectroscopy: A microscopic approach

Kislay Sinha, Jose Menendez, David Wright, David W. Niles, Hartmut Höchst

Research output: Contribution to journalArticle

3 Scopus citations


Strain relaxation at the lattice mismatched CdS/GaAs (100) interface has been investigated by reflection high-energy electron diffraction (RHEED) and Raman scattering. In-situ RHEED measurements indicate a gradual relief of the mismatch strain once the critical film thickness is exceeded. After-growth Raman measurements reveal that the strain profile measured by RHEED remains "frozen" in the grown layer except very close to the CdS/GaAs interface, where further relaxation takes place. A microscopic calculation shows that the presence of nonuniform strain leads to phonon confinement effects, as localized modes appear in regions of similar strains.

Original languageEnglish (US)
Pages (from-to)2640-2643
Number of pages4
JournalJournal of Applied Physics
Issue number6
StatePublished - Dec 1 1992


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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