Nonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays

Winston Chern, Keng Hsu, Ik Su Chun, Bruno P.D. Azeredo, Numair Ahmed, Kyou Hyun Kim, Jian Min Zuo, Nick Fang, Placid Ferreira, Xiuling Li

Research output: Contribution to journalArticle

168 Scopus citations

Abstract

Semiconductor nanowires have potential applications in photovoltaics, batteries, and thermoelectrics. We report a top-down fabrication method that involves the combination of superionic-solid-state-stamping (S4) patterning with metal-assisted-chemical-etching (MacEtch), to produce silicon nanowire arrays with defined geometry and optical properties in a manufacturable fashion. Strong light emission in the entire visible and near infrared wavelength range at room temperature, tunable by etching condition, attributed to surface features, and enhanced by silver surface plasmon, is demonstrated.

Original languageEnglish (US)
Pages (from-to)1582-1588
Number of pages7
JournalNano Letters
Volume10
Issue number5
DOIs
StatePublished - May 12 2010

Keywords

  • Light-emitting
  • Metal-assisted-chemical-etching (MacEtch)
  • S4
  • Sidewall roughness
  • Silicon nanowire

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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    Chern, W., Hsu, K., Chun, I. S., Azeredo, B. P. D., Ahmed, N., Kim, K. H., Zuo, J. M., Fang, N., Ferreira, P., & Li, X. (2010). Nonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays. Nano Letters, 10(5), 1582-1588. https://doi.org/10.1021/nl903841a