Nonlinearity effects of lateral density diffusion coefficient on gain-guided VCSEL performance

Jianzhong Li, Samson H. Cheung, Cun-Zheng Ning

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Electron and hole diffusions in the plane of semiconductor quantum wells play an important part in the static and dynamic operations of semiconductor lasers. In this paper, we apply a hydrodynamic model developed from the semiconductor Bloch equations to numerically study the effects of nonlinearity in the diffusion coefficient on single mode operation and direct modulation of a gain-guided InGaAs/GaAs multiple quantum well laser, operating not too far from threshold. We found that a small diffusion coefficient is advantageous for lowering the threshold current and increasing the modulation bandwidth. Most importantly, the effects of nonlinearity in the coefficient can be approximately reproduced by replacing the coefficient with an effective constant diffusion coefficient, which corresponds roughly to the half height density of the density distribution. This conclusion is the same as in Ref. 8, but we will discuss the disagreements in reaching it. Finally, the beam profile is slightly modified in the nonlinear case.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsT P Lee, Q Wang
Pages52-59
Number of pages8
Volume4580
DOIs
StatePublished - 2001
Externally publishedYes
EventOptoelectronics, Materials, and Devices for Communications - Beijing, China
Duration: Nov 12 2001Nov 15 2001

Other

OtherOptoelectronics, Materials, and Devices for Communications
CountryChina
CityBeijing
Period11/12/0111/15/01

Fingerprint

Surface emitting lasers
diffusion coefficient
nonlinearity
Semiconductor quantum wells
modulation
electron diffusion
Modulation
quantum well lasers
coefficients
threshold currents
Quantum well lasers
density distribution
semiconductor lasers
hydrodynamics
quantum wells
bandwidth
Semiconductor lasers
thresholds
Hydrodynamics
Semiconductor materials

Keywords

  • Inhomogeneity
  • Lateral carrier diffusion
  • Nonlinearity
  • Semiconductor laser
  • VCSEL

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Li, J., Cheung, S. H., & Ning, C-Z. (2001). Nonlinearity effects of lateral density diffusion coefficient on gain-guided VCSEL performance. In T. P. Lee, & Q. Wang (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4580, pp. 52-59) https://doi.org/10.1117/12.444931

Nonlinearity effects of lateral density diffusion coefficient on gain-guided VCSEL performance. / Li, Jianzhong; Cheung, Samson H.; Ning, Cun-Zheng.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / T P Lee; Q Wang. Vol. 4580 2001. p. 52-59.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Li, J, Cheung, SH & Ning, C-Z 2001, Nonlinearity effects of lateral density diffusion coefficient on gain-guided VCSEL performance. in TP Lee & Q Wang (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4580, pp. 52-59, Optoelectronics, Materials, and Devices for Communications, Beijing, China, 11/12/01. https://doi.org/10.1117/12.444931
Li J, Cheung SH, Ning C-Z. Nonlinearity effects of lateral density diffusion coefficient on gain-guided VCSEL performance. In Lee TP, Wang Q, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4580. 2001. p. 52-59 https://doi.org/10.1117/12.444931
Li, Jianzhong ; Cheung, Samson H. ; Ning, Cun-Zheng. / Nonlinearity effects of lateral density diffusion coefficient on gain-guided VCSEL performance. Proceedings of SPIE - The International Society for Optical Engineering. editor / T P Lee ; Q Wang. Vol. 4580 2001. pp. 52-59
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