Abstract
Electron and hole diffusions in the plane of semiconductor quantum wells play an important part in the static and dynamic operations of semiconductor lasers. In this paper, we apply a hydrodynamic model developed from the semiconductor Bloch equations to numerically study the effects of nonlinearity in the diffusion coefficient on single mode operation and direct modulation of a gain-guided InGaAs/GaAs multiple quantum well laser, operating not too far from threshold. We found that a small diffusion coefficient is advantageous for lowering the threshold current and increasing the modulation bandwidth. Most importantly, the effects of nonlinearity in the coefficient can be approximately reproduced by replacing the coefficient with an effective constant diffusion coefficient, which corresponds roughly to the half height density of the density distribution. This conclusion is the same as in Ref. 8, but we will discuss the disagreements in reaching it. Finally, the beam profile is slightly modified in the nonlinear case.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Editors | T P Lee, Q Wang |
Pages | 52-59 |
Number of pages | 8 |
Volume | 4580 |
DOIs | |
State | Published - 2001 |
Externally published | Yes |
Event | Optoelectronics, Materials, and Devices for Communications - Beijing, China Duration: Nov 12 2001 → Nov 15 2001 |
Other
Other | Optoelectronics, Materials, and Devices for Communications |
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Country/Territory | China |
City | Beijing |
Period | 11/12/01 → 11/15/01 |
Keywords
- Inhomogeneity
- Lateral carrier diffusion
- Nonlinearity
- Semiconductor laser
- VCSEL
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics