Nongeometric field enhancement in semiconducting cold cathodes and in metal-insulator-semiconductor structures

Griff L. Bilbro, Robert J. Nemanich

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

We extend the usual one-dimensional equilibrium theory of the surface space charge region that screens a semiconductor from an external electric field in order to admit perturbations in three dimensions and time. We identify a class of perturbations of the one-dimensional equilibrium that grow exponentially in time at least until our first-order perturbation theory fails. The resulting spontaneous field enhancement may explain enhancement factors observed in electron emission from semiconducting cathodes and may similarly contribute to gate leakage in metal-oxide-semiconductor field effect transistors.

Original languageEnglish (US)
Pages (from-to)891-893
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number7
DOIs
StatePublished - Feb 14 2000
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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